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NCR169DRLRP Datasheet

  • NCR169DRLRP

  • General Purpose Sensitive Gate Silicon Controlled Rectifier

  • 8頁

  • ONSEMI

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NCR169D
General Purpose
Sensitive Gate
Silicon Controlled Rectifier
Reverse Blocking Thyristor
PNPN device designed for line-powered general purpose
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in a cost effective plastic TO-226AA package.
Features
http://onsemi.com
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Sensitive Gate Allows Direct Triggering by Microcontrollers and
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Other Logic Circuits
On鈭扴tate Current Rating of 0.8 Amperes RMS at 80擄C
Surge Current Capability 鈭?10 Amperes
Immunity to dV/dt 鈭?20 V/渭sec Minimum at 110擄C
Glass-Passivated Surface for Reliability and Uniformity
Device Marking: NCR169D, Date Code
Pb鈭扚ree Packages are Available
SCR
0.8 AMPERES RMS
400 VOLTS
G
A
K
MARKING
DIAGRAM
NCR
169D
ALYWWG
G
K
G
A
MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Rating
Peak Repetitive Off鈭扴tate Voltage (Note 1.)
(T
J
=
*40
to 110擄C, Sine Wave, 50 to
60 Hz; Gate Open)
On-State RMS Current
(T
C
= 80擄C) 180擄 Conduction Angles
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
T
J
= 25擄C)
Circuit Fusing Consideration (t = 10 ms)
Forward Peak Gate Power
(T
A
= 25擄C, Pulse Width
v
1.0
渭
s)
Forward Average Gate Power
(T
A
= 25擄C, t = 20 ms)
Forward Peak Gate Current
(T
A
= 25擄C, Pulse Width
v
1.0
渭
s)
Reverse Peak Gate Voltage
(T
A
= 25擄C, Pulse Width
v
1.0
渭
s)
Operating Junction Temperature Range
@ Rate V
RRM
and V
DRM
Storage Temperature Range
Symbol
V
DRM,
V
RRM
I
T(RMS)
I
TSM
Value
400
Unit
Volts
0.8
10
Amp
Amps
TO鈭?2
(TO鈭?26AA)
CASE 029
STYLE 10
1
2
3
I
2
t
P
GM
P
G(AV)
I
GM
V
GRM
T
J
T
stg
0.415
0.1
0.10
1.0
5.0
鈭?0 to
110
鈭?0 to
150
A
2
s
Watt
Watt
Amp
Volts
A
= Assembly Location
L
= Wafer Lot
Y
= Year
WW = Work Week
G
= Pb鈭扚ree Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
擄C
擄C
1
2
3
Cathode
Gate
Anode
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
漏
Semiconductor Components Industries, LLC, 2005
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
1
October, 2005 鈭?Rev. 1
Publication Order Number:
NCR169D/D

NCR169DRLRP 產(chǎn)品屬性

  • ON Semiconductor

  • SCR

  • 10 A

  • 400 V

  • 0.01 mA

  • 1.7 V

  • 1.2 V

  • 5 V

  • 0.2 mA

  • 5 mA

  • Through Hole

  • TO-92-3 (TO-226)

  • Ammo

  • 2000

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