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NAND04GW3B2AN1E Datasheet

  • NAND04GW3B2AN1E

  • 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memo...

  • 58頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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NAND04GW3B2B
NAND08GW3B2A
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page
3V, NAND Flash Memories
PRELIMINARY DATA
Feature summary
鈻?/div>
High density NAND Flash Memory
鈥?up to 8 Gbit memory array
鈥?Up to 256 Mbit spare area
鈥?Cost effective solution for mass storage
applications
NAND Interface
鈥?x8 bus width
鈥?Multiplexed Address/ Data
Supply voltage
鈥?3.0V device: V
DD
= 2.7 to 3.6V
Page size
鈥?(2048 + 64 spare) Bytes
Block size
鈥?(128K + 4K spare) Bytes
Page Read/Program
鈥?Random access: 25碌s (max)
鈥?Sequential access: 30ns (min)
鈥?Page program time: 200碌s (typ)
Copy Back Program mode
鈥?Fast page copy without external buffering
Cache Program and Cache Read modes
鈥?Internal Cache Register to improve the
program and read throughputs
Fast Block Erase
鈥?Block erase time: 2ms (typ)
Status Register
Electronic Signature
Chip Enable 鈥榙on鈥檛 care鈥?/div>
鈥?for simple interface with microcontroller
Serial Number option
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
TSOP48 12 x 20mm
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
Data protection
鈥?Hardware and Software Block Locking
鈥?Hardware Program/Erase locked during
Power transitions
Data integrity
鈥?100,000 Program/Erase cycles
鈥?10 years Data Retention
ECOPACK
package
Development tools
鈥?Error Correction Code software and
hardware models
鈥?Bad Blocks Management and Wear
Leveling algorithms
鈥?File System OS Native reference software
鈥?Hardware simulation models
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
May 2006
Rev 2
1/58
www.st.com
1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.

NAND04GW3B2AN1E相關(guān)型號PDF文件下載

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    描述
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  • 英文版
    128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 W...
    STMICROELECTRONICS
  • 英文版
    128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 W...
    STMICROELECTRON...
  • 英文版
    1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flas...
    STMICROELECTRONICS
  • 英文版
    1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flas...
    STMICROELECTRON...
  • 英文版
    256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Mem...
    STMICROELECTRONICS
  • 英文版
    256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Mem...
    STMICROELECTRON...
  • 英文版
    1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbi...
    STMICROELECTRON...
  • 英文版
    1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flas...
    STMICROELECTRONICS
  • 英文版
    1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flas...
    STMICROELECTRON...
  • 英文版
    2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
    ST
  • 英文版
    128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 W...
    STMICROELECTRONICS
  • 英文版
    128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 W...
    STMICROELECTRON...
  • 英文版
    128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 W...
    STMICROELECTRONICS
  • 英文版
    128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 W...
    STMICROELECTRON...
  • 英文版
    256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Mem...
    STMICROELECTRONICS
  • 英文版
    256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Mem...
    STMICROELECTRON...
  • 英文版
    128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 W...
    STMICROELECTRONICS
  • 英文版
    128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 W...
    STMICROELECTRON...
  • 英文版
    256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Mem...
    STMICROELECTRONICS
  • 英文版
    256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Mem...
    STMICROELECTRON...

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