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N32T1630C1EZ-60I Datasheet

  • N32T1630C1EZ-60I

  • 32Mb Ultra-Low Power Asynchronous CMOS PSRAM

  • 14頁

  • ETC

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NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
N32T1630C1E
32Mb Ultra-Low Power Asynchronous CMOS PSRAM
2M x 16 bit
Overview
The N32T1630C1E is an integrated memory
device containing a 32 Mbit Pseudo Static Random
Access Memory using a self-refresh DRAM array
organized as 2,097,152 words by 16 bits. It is
designed to be identical in operation and interface
to standard 6T SRAMS. The device is designed for
low standby and operating current and includes a
power-down feature to automatically enter standby
mode. Also included are several other power
saving modes: a deep sleep mode where data is
not retained in the array and partial array refresh
mode where data is retained in a portion of the
array. Both these modes reduce standby current
drain. The device can operate over a very wide
temperature range of -25
o
C to +85
o
C.
Features
鈥?Dual voltage for Optimum Performance:
Vccq - 2.7V to 3.3V
Vcc - 2.7V to 3.3V
鈥?Fast Cycle Times
T
ACC
< 60 nS
T
ACC
< 70 nS
鈥?Very low standby current
I
SB
< 120碌A(chǔ)
鈥?Very low operating current
Icc < 25mA
鈥?Dual rail operation
V
CCQ
and V
SSQ
for separate I/O power rail
鈥?Compact Space Saving BGA Package
Product Family
Part Number
Package
Type
Operating
Temperature
Power
Supply
2.7V - 3.3V(V
CC
)
Speed
Standby
Operating
Current (I
SB
), Current (Icc),
Max
Max
120
碌A(chǔ)
3 mA @ 1MHz
N32T1630C1EZ
48-BGA
-25
o
C to +85
o
C
60ns
70ns
Figure 1: Pin Configuration
1
A
B
C
D
E
F
G
H
LB
I/O
8
I/O
9
2
OE
UB
I/O
10
3
A
0
A
3
A
5
A
17
NC
A
14
A
12
A
9
4
A
1
A
4
A
6
A
7
A
16
A
15
A
13
A
10
5
A
2
CE
I/O
1
I/O
3
I/O
4
I/O
5
WE
A
11
6
ZZ
I/O
0
I/O
2
V
CC
V
SS
I/O
6
I/O
7
A
20
Table 1: Pin Descriptions
Pin Name
A
0
-A
20
WE
CE
ZZ
OE
LB
UB
I/O
0
-I/O
15
V
CC
V
SS
V
CCQ
V
SSQ
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Deep Sleep Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Power
Ground
Power I/O only
Ground I/O only
V
SSQ
I/O
11
V
CCQ
I/O
12
I/O
14
I/O
13
I/O
15
A
18
A
19
A
8
48 Pin BGA (top)
6 x 8 mm
(DOC # 14-02-006 Rev C ECN 01-1040
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1

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