鈥?/div>
MXR9745RT1 is Gate鈥揇rain Pin Out Reversed.
All Electricals Same as MXR9745T1
CASE 345鈥?3
(MXR9745RT1, STYLE 8)
(MXR9745T1, STYLE 9)
(SOT鈥?9)
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1 M鈩?
Gate鈥揝ource Voltage
Drain Current 鈥?Continuous
Total Device Dissipation @ TC = 50擄C
Derate above 50擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VDGO
VGS
ID
PD
Tstg
TJ
Value
35
25
鹵
10
2
10
100
鈥?65 to +150
150
Unit
Vdc
Vdc
Vdc
Adc
W
mW/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
10
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain鈥揝ource Leakage Current
(VDS = 35 V, VGS = 0)
Gate鈥揝ource Leakage Current
(VGS = 5 V, VDS = 0)
IDSS
IGSS
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
10
1
碌A(chǔ)dc
碌A(chǔ)dc
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MXR9745T1 MXR9745RT1
1
MXR9745T1相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
ETC [Low Cost 【1.5 g Tri Axis Accelerometer with Ratiometr...
ETC
-
英文版
Accelerometer X, Y, Z Axis ±5g 17Hz 16-LCC
-
英文版
Accelerometer X, Y, Z Axis ±1.5g 17Hz 16-LCC
-
英文版
31.5 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
-
英文版
31.5 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
MOTOROLA [...
-
英文版
31.5 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
-
英文版
31.5 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
MOTOROLA [...
-
英文版
MXR9150MZ - Accelerometer, 3 Axis Sensor Evaluation Board
-
英文版
MXR9500MZ - Accelerometer, 3 Axis Sensor Evaluation Board
MOTOROLA
1
2
3
4
