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MX69F1604C3TXBI-90 Datasheet

  • MX69F1604C3TXBI-90

  • Macronix International [16M-BIT [X16] FLASH AND 2M-BIT/4M-B...

  • MCNIX

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ADVANCED INFORMATION
MX69F1602/1604C3T/B
16M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM
MIXED MULTI CHIP PACKAGE MEMORY
FEATURES
鈥?Supply voltage range: 2.7V to 3.6V
鈥?Fast access time: Flash memory:70/90ns
SRAM memory:70/85ns
鈥?Operation temperature range: -40 ~ 85擄
C
- Word write suspend to read
- Sector erase suspend to word write
- Sector erase suspend to read register report
鈥?Automatic sector erase, word write and sector lock/
鈥?/div>
鈥?/div>
unlock configuration
100,000 minimum erase/program cycles
Boot Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
Status Register feature for detection of program or
erase cycle completion
Data protection performance
- Sectors to be locked/unlocked
Common Flash Interface (CFI)
128-bit Protection Register
- 64-bit Unique Device Identifier
- 64-bit User-Programmable
Latch-up protected to 100mA from -1V to VCC+1V
FLASH
鈥?Word mode only
鈥?VCCf=VCCQ=2.7V~3.6V for read, erase and program
operation
鈥?VPP=12V for fast production programming
鈥?Low power consumption
- 9mA typical active read current, f=5MHz
- 18mA typical program current (VPP=1.65~3.6V)
- 21mA typical erase current (VPP=1.65~3.6V)
- 7uA typical standby current under power saving mode
鈥?Sector architecture
- Sector structure : 4Kword x 2 (boot sectors), 4Kword
x 6 (parameter sectors), 32Kword x 31 (main sectors)
- Top/Bottom Boot
鈥?Auto Erase and Auto Program
- Automatically program and verify data at specified
address
- Auto sector erase at specified sector
鈥?Automatic Suspend Enhance
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
SRAM
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
MX69F1602C3T/B: 128K wordx16 Bit
MX69F1604C3T/B: 256K wordx16 Bit
70mA maximum active current
1uA typical standby current
Data retention supply voltage: 2.0V~3.6V
Byte data control : LBs(Q0 to Q7) and UBs(Q8 to Q15)
P/N:PM0954
REV. 0.5, JUL. 09, 2003
1

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