C
O N F I D E N T I A L
MWS11-GB11-xx
InGaP HBT Gain Block
A
M I C R O S E M I
C O M P A N Y
P
REVIEW
This general purpose amplifier is a low
cost, broadband RFIC manufactured with
an InGaP/GaAs Heterojunction Bipolar
Transistor (HBT) process (MOCVD).
This RFIC amplifier was designed as an
easily cascadable 50 ohm gain block. The
device is self-contained with 50 ohm input
and output impedance. Applications in-
clude IF and RF amplification in wireless/
wired voice and data communication
products and broadband test equipment
operating up to 6 GHz.
This RFIC amplifier is initially
available in a plastic SOT-89 3-Pin
package to handle P1dB output power up
to 19dBm (5V). The same RFIC will be
available later in an advanced Microsemi
Gigamite鈩?package, with significantly
smaller footprint for applications where
board space is at a premium.
Advanced InGaP HBT
DC to 6GHz
Single +5V Supply
Small Signal Gain = 16dB
P1dB = 19dBm (5V),
f=1GHz
SOT-89 3-Pin, & Gigamite
Packages
W W W .
Microsemi
.
COM
Broadband Gain Blocks
IF or RF buffer Amplifiers
Driver Stage for Power
IMPORTANT:
For the most current data, consult
MICROSEMI
鈥檚 website:
http://www.microsemi.com
Amps
Final Power Amp for Low to
Medium Power Applications
Broadband Test Equipment
45
Gain (dB), Pout (dBm), Current (A)00
40
35
30
25
20
15
10
5
0
-5
-1 0
-2 0
-1 5
-1 0
-5
0
5
P in (d B m )
10
15
P out
G a in
C u rre n t
f = 5 .7 G H z
Vcc = 5 V
N o m in a l C u r r e n t
20 m A
MWS11-GB11
MWS11-GB11
PK
Plastic SOT-89
3 Pin
Gigamite
MWS11GB11-G1
MWS11GB11-S1
Note: Available in Tape & Reel.
Append the letter 鈥淭鈥?to the part number. (i.e. MSW11GB11-S89T)
Copyright
漏
2000
Rev. 0.2,2000-12-15
Microsemi
11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121
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