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MW6S010GMR1 Datasheet

  • MW6S010GMR1

  • RF Power Field Effect Transistor

  • 541.58KB

  • 16頁(yè)

  • FREESCALE

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Freescale Semiconductor
Technical Data
Document Number: MW6S010
Rev. 1, 5/2005
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for Class A or Class AB base station applications with frequencies
up to 1500 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
鈥?/div>
Typical Two - Tone Performance @ 960 MHz, V
DD
= 28 Volts, I
DQ
=
125 mA, P
out
= 10 Watts PEP
Power Gain 鈥?18 dB
Drain Efficiency 鈥?32%
IMD 鈥?- 37 dBc
鈥?/div>
Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW
Output Power
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
On - Chip RF Feedback for Broadband Stability
鈥?/div>
Qualified Up to a Maximum of 32 V
DD
Operation
鈥?/div>
Integrated ESD Protection
鈥?/div>
N Suffix Indicates Lead - Free Terminations
鈥?/div>
200擄C Capable Plastic Package
鈥?/div>
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
MW6S010NR1
MW6S010GNR1
MW6S010MR1
MW6S010GMR1
450 - 1500 MHz, 10 W, 28 V
LATERAL N - CHANNEL
BROADBAND RF POWER MOSFETs
CASE 1265 - 08, STYLE 1
TO - 270 - 2
PLASTIC
MW6S010NR1(MR1)
CASE 1265A - 02, STYLE 1
TO - 270 - 2 GULL
PLASTIC
MW6S010GNR1(GMR1)
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
- 0.5, +68
- 0.5, +12
61.4
0.35
- 65 to +175
200
Unit
Vdc
Vdc
W
W/擄C
擄C
擄C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80擄C, 10 W PEP
Symbol
R
胃JC
Value
(1.2)
2.85
Unit
擄C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
錚?/div>
Freescale Semiconductor, Inc., 2005. All rights reserved.
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
1
RF Device Data
Freescale Semiconductor

MW6S010GMR1 產(chǎn)品屬性

  • 500

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 960MHz

  • 18dB

  • 28V

  • 10µA

  • -

  • 125mA

  • 10W

  • 68V

  • TO-270-2 鷗翼型

  • TO-270-2 鷗翼型

  • 帶卷 (TR)

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