MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MW4IC2230/D
The Wideband IC Line
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC2230 wideband integrated circuit is designed for W - CDMA base
station applications. It uses Motorola鈥檚 newest High Voltage (26 to 28 Volts)
LDMOS IC technology and integrates a multi - stage structure. Its wideband
On - Chip design makes it usable from 1600 to 2400 MHz. The linearity
performances cover all modulations for cellular applications: GSM, GSM
EDGE, TDMA, CDMA and W - CDMA.
Final Application
Typical Single - carrier W - CDMA Performance:
V
DD
= 28 Volts, I
DQ1
=
60 mA, I
DQ2
= 350 mA, P
out
= 5 Watts Avg., f = 2140 MHz, Channel
Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on
CCDF.
Power Gain 鈥?31 dB
Drain Efficiency 鈥?15%
ACPR @ 5 MHz = - 45 dBc @ 3.84 MHz Bandwidth
Driver Application
Typical Single - carrier W - CDMA Performance:
V
DD
= 28 Volts, I
DQ1
=
60 mA, I
DQ2
= 350 mA, P
out
= 0.4 Watts Avg., f = 2140 MHz, Channel
Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain 鈥?31.5 dB
ACPR @ 5 MHz = - 53.5 dBc @ 3.84 MHz Bandwidth
鈥?/div>
Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW
Output Power
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
鈥?/div>
Integrated Temperature Compensation with Enable/Disable Function
鈥?/div>
On - Chip Current Mirror g
m
Reference FET for Self Biasing Application (1)
鈥?/div>
Integrated ESD Protection
鈥?/div>
Also Available in Gull Wing for Surface Mount
鈥?/div>
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
MW4IC2230MBR1
MW4IC2230GMBR1
2110 - 2170 MHz, 30 W, 28 V
SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
Freescale Semiconductor, Inc...
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW4IC2230MBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW4IC2230GMBR1
V
RD1
V
RG1
V
DS2
V
DS1
PIN CONNECTIONS
GND
V
DS2
V
RD1
V
RG1
V
DS1
RF
in
V
DS3
/RF
out
V
GS1
V
GS2
V
GS3
GND
1
2
3
4
5
6
7
8
9
10
11
16
15
GND
3 Stages I
C
14
RF
in
V
DS3/
RF
out
V
GS1
V
GS2
V
GS3
Quiescent Current
Temperature Compensation
13
12
GND
Functional Block Diagram
(Top View)
NOTE: Exposed backside flag is source
terminal for transistors.
(1) Refer to AN1987/D,
Quiescent Current Control for the RF Integrated Circuit Device Family.
Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1987.
REV 2
MOTOROLA RF
錚?/div>
Motorola, Inc. 2004
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MW4IC2230MBR1 MW4IC2230GMBR1
1
MW4IC2230GMBR1 產(chǎn)品屬性
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