MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MW4IC2020/D
The Wideband IC Line
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC2020M wideband integrated circuit is designed for base station
applications. It uses Motorola鈥檚 newest High Voltage (26 to 28 Volts) LDMOS IC
technology and integrates a multi - stage structure. Its wideband On - Chip
design makes it usable from 1600 to 2400 MHz. The linearity performances
cover all modulations for cellular applications: GSM, GSM EDGE, TDMA,
CDMA and W - CDMA.
Final Application
Typical Two - Tone Performance: V
DD
= 26 Volts, I
DQ1
= 80 mA, I
DQ2
=
200 mA, I
DQ3
= 300 mA, P
out
= 20 Watts PEP, Full Frequency Band
Power Gain 鈥?29 dB
IMD 鈥?- 32 dBc
Drain Efficiency 鈥?26% (at 1805 MHz) and 20% (at 1990 MHz)
Driver Applications
Typical GSM EDGE Performance: V
DD
= 26 Volts, I
DQ1
= 80 mA, I
DQ2
=
230 mA, I
DQ3
= 230 mA, P
out
= 5 Watts Avg., Full Frequency Band
Power Gain 鈥?29 dB
Spectral Regrowth @ 400 kHz Offset = - 66 dBc
Spectral Regrowth @ 600 kHz Offset = - 77 dBc
EVM 鈥?1% rms
Typical CDMA Performance: V
DD
= 26 Volts, I
DQ1
= 80 mA, I
DQ2
=
240 mA, I
DQ3
= 250 mA, P
out
= 1 Watt Avg., Full Frequency Band, IS - 97
Pilot, Sync, Paging, Traffic Codes 8 through 13
Power Gain 鈥?30 dB
ACPR @ 885 kHz Offset = - 61 dBc @ 30 kHz Bandwidth
ALT1 @ 1.25 MHz Offset = - 69 dBc @ 12.5 kHz Bandwidth
ALT2 @ 2.25 MHz Offset = - 59 dBc @ 1 MHz Bandwidth
鈥?/div>
Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 8 Watts CW
Output Power
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
鈥?/div>
Integrated Temperature Compensation with Enable/Disable Function
鈥?/div>
On - Chip Current Mirror g
m
Reference FET for Self Biasing Application (1)
鈥?/div>
Integrated ESD Protection
鈥?/div>
Also Available in Gull Wing for Surface Mount
鈥?/div>
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
V
RD1
V
RG1
V
DS2
V
DS1
MW4IC2020MBR1
MW4IC2020GMBR1
1805 - 1990 MHz, 20 W, 26 V
GSM/GSM EDGE, CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
Freescale Semiconductor, Inc...
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW4IC2020MBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW4IC2020GMBR1
PIN CONNECTIONS
GND
V
DS2
V
RD1
V
RG1
V
DS1
RF
in
V
DS3
/RF
out
V
GS1
V
GS2
V
GS3
GND
1
2
3
4
5
6
7
8
9
10
11
16
15
GND
3 Stages I
C
14
RF
in
V
DS3/
RF
out
(Top View)
NOTE: Exposed backside flag is source
Functional Block Diagram
terminal for transistors.
(1) Refer to AN1987/D,
Quiescent Current Control for the RF Integrated Circuit Device Family.
Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1987.
REV 4
V
GS1
V
GS2
V
GS3
Quiescent Current
Temperature Compensation
13
12
GND
MOTOROLA RF
錚?/div>
Motorola, Inc. 2004
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MW4IC2020MBR1 MW4IC2020GMBR1
1
MW4IC2020GMBR1 產品屬性
500
RF/IF 和 RFID
RF 放大器
-
1.6GHz ~ 2.4GHz
-
29dB
-
手機，GSM，EDGE，CDMA
26V
80mA
-
TO-272-16 變型，鷗翼
帶卷 (TR)
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