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MV2105G Datasheet

  • MV2105G

  • Silicon Tuning Diodes

  • 5頁

  • ONSEMI

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MMBV2101LT1 Series,
MV2105, MV2101, MV2109,
LV2209
Preferred Device
Silicon Tuning Diodes
These devices are designed in popular plastic packages for the high
volume requirements of FM Radio and TV tuning and AFC, general
frequency control and tuning applications. They provide solid鈭抯tate
reliability in replacement of mechanical tuning methods. Also
available in a Surface Mount Package up to 33 pF.
Features
http://onsemi.com
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
6.8鈭?00 pF, 30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
Cathode
SOT鈭?3
2
Cathode
1
Anode
1
Anode
High Q
Controlled and Uniform Tuning Ratio
Standard Capacitance Tolerance 鈭?10%
Complete Typical Design Curves
Pb鈭扚ree Packages are Available
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Forward Power Dissipation
@ T
A
= 25擄C
MMBV21xx
Derate above 25擄C
@ T
A
= 25擄C
Derate above 25擄C
Junction Temperature
Storage Temperature Range
MV21xx
LV2209
T
J
T
stg
Symbol
V
R
I
F
P
D
225
1.8
280
2.8
+150
鈭?5 to +150
mW
mW/擄C
mW
mW/擄C
擄C
擄C
Value
30
200
Unit
Vdc
mAdc
1
2
3
TO鈭?2
MARKING
DIAGRAMS
SOT鈭?3 (TO鈭?36)
CASE 318鈭?8
STYLE 8
xxx M
G
G
1
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
xxx = Specific Device Code
M = Date Code*
G
= Pb鈭扚ree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
= 10
mAdc)
MMBV21xx, MV21xx
LV2209
Reverse Voltage Leakage Current
(V
R
= 25 Vdc, T
A
= 25擄C)
Diode Capacitance Temperature Co-
efficient (V
R
= 4.0 Vdc, f = 1.0 MHz)
Symbol
V
(BR)R
30
25
I
R
TC
C
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
280
鈭?/div>
鈭?/div>
0.1
鈭?/div>
mAdc
ppm/擄C
Min
Typ
Max
Unit
Vdc
1
2
TO鈭?2 (TO鈭?26AC)
CASE 182
STYLE 1
yy
yyyy
AYWW
G
G
yyyyyy = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb鈭扚ree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2006
1
January, 2006 鈭?Rev. 4
Publication Order Number:
MMBV2101LT1/D

MV2105G 產(chǎn)品屬性

  • ON Semiconductor

  • 變?nèi)荻O管

  • 13.5 pF

  • 30 V

  • Through Hole

  • TO-92-2

  • Bulk

  • Single

  • + 150 C

  • - 55 C

  • 2.5

  • Through Hole

  • 1000

  • 2 / 30

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