鈥?/div>
Monolithic Chip Provides Near Perfect Matching 鈥?Guaranteed
鹵
1.0% (Max) Over Specified Tuning Range
MV104
DUAL
VOLTAGE VARIABLE
CAPACITANCE DIODE
1
2
3
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Forward Current
Total Power Dissipation @ T
A
= 25擄C
Derate above 25擄C
Junction Temperature
Storage Temperature Range
Symbol
V
R
I
F
P
D
T
J
T
stg
Value
32
200
280
2.8
+125
鈥?5 to +150
Unit
Vdc
mAdc
mW
mW/擄C
擄C
擄C
CASE 29鈥?1, STYLE 15
TO鈥?2 (TO鈥?26AA)
Pin 1
A1
Pin 2
C
Pin 3
A2
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
(EACH DIODE)
Characteristic
Reverse Breakdown Voltage
(I
R
= 10
碌Adc)
Reverse Voltage Leakage Current T
A
= 25擄C
(V
R
= 30 Vdc)
T
A
= 60擄C
Diode Capacitance Temperature Coefficient
(V
R
= 4.0 Vdc, f = 1.0 MHz)
Symbol
V
(BR)R
I
R
TC
C
Min
32
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
280
Max
鈥?/div>
50
500
鈥?/div>
Unit
Vdc
nAdc
ppm/擄C
C
T
, Diode Capacitance
V
R
= 3.0 Vdc, f = 1.0 MHz
pF
Device
MV104
Min
37
Max
42
Q, Figure of Merit
V
R
= 3.0 Vdc
f = 100 MHz
Min
100
Typ
140
C
R
, Capacitance Ratio
C
3
/C
30
f = 1.0 MHz
Min
2.5
Max
2.8
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 2
Publication Order Number:
MV104/D
MV104 產(chǎn)品屬性
ON Semiconductor
變容二極管
37 pF
32 V
TO-92-3
Bulk
VHF
Dual Common Cathode
+ 125 C
- 55 C
2.5
Through Hole
5000
3 / 30
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