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MUN5216DW1T1 Datasheet

  • MUN5216DW1T1

  • Dual Bias Resistor Transistors

  • 8頁(yè)

  • LRC

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LESHAN RADIO COMPANY, LTD.
Dual Bias ResistorTransistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base鈥揺mitter resistor. These
digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device. In
the MUN5211DW1T1 series, two BRT devices are housed in the SOT鈥?63 package which
is ideal for low power surface mount applications where board space is at a premium.
鈥?Simplifies Circuit Design
鈥?Reduces Board Space
鈥?Reduces Component Count
鈥?Available in 8 mm, 7 inch/3000 Unit Tape and Reel
MUN5211DW1T1
Series
6
5
4
1
2
3
SOT-363
CASE 419B STYLE1
6
5
4
MAXIMUM RATINGS
(T
A
= 25擄C unless otherwise noted, common for Q
1
and Q
2
)
Rating
Symbol Value
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Collector-Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance 鈥?/div>
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance 鈥?/div>
Junction-to-Ambient
Thermal Resistance 鈥?/div>
Junction-to-Lead
Junction and Storage
Temperature
1. FR鈥? @ Minimum Pad
P
D
187 (Note 1.)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
670 (Note 1.)
490 (Note 2.)
mW
mW/擄C
擄C/W
Q
2
R
2
R
1
1
2
R
1
R
2
Q
1
3
MARKING DIAGRAM
6
5
4
7X
1
2
3
R
胃JA
7X = Device Marking
=
(See Page 2)
Symbol
P
D
Max
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
493 (Note 1.)
325 (Note 2.)
188 (Note 1.)
208 (Note 2.)
鈥?5 to +150
Unit
mW
mW/擄C
擄C/W
擄C/W
擄C
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
R
胃JA
R
胃JL
T
J
, T
stg
2. FR鈥? @ 1.0 x 1.0 inch Pad
MUN5211dw鈥?/8

MUN5216DW1T1 產(chǎn)品屬性

  • 3,000

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 陣列﹐預(yù)偏壓式

  • -

  • 2 個(gè) NPN 預(yù)偏壓式（雙）

  • 100mA

  • 50V

  • 4.7k

  • -

  • 160 @ 5mA，10V

  • 250mV @ 1mA，10mA

  • 500nA

  • -

  • 250mW

  • 表面貼裝

  • 6-TSSOP，SC-88，SOT-363

  • SOT-363

  • 帶卷 (TR)

MUN5216DW1T1相關(guān)型號(hào)PDF文件下載

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  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI [ON...
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI [ON...
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI [ON...
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI [ON...
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI [ON...
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI [ON...
  • 英文版
    Dual Bias Resistor Transistors
    LRC
  • 英文版
    Dual Bias Resistor Trasnsistors
    MOTOROLA
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI [ON...
  • 英文版
    Dual Bias Resistor Transistors
    LRC [Lesha...
  • 英文版
    Dual Bias Resistor Trasnsistors
    MOTOROLA [...
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI [ON...

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