MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MUN5211DW1T1/D
Dual Bias Resistor Transistors
NPN Silicon Surface Mount Transistors with
Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base resistor and a
base鈥揺mitter resistor. These digital transistors are designed to replace a single
device and its external resistor bias network. The BRT eliminates these
individual components by integrating them into a single device. In the
MUN5211DW1T1 series, two BRT devices are housed in the SOT鈥?63
package which is ideal for low power surface mount applications where board
space is at a premium.
鈥?/div>
Simplifies Circuit Design
鈥?/div>
Reduces Board Space
鈥?/div>
Reduces Component Count
鈥?/div>
Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
MUN5211DW1T1
SERIES
Motorola Preferred Devices
6
5
4
1
2
3
CASE 419B鈥?1, STYLE 1
SOT鈥?63
(3)
(2)
R1
R2
(1)
Q1
Q2
R2
(4)
(5)
R1
(6)
MAXIMUM RATINGS
(TA = 25擄C unless otherwise noted, common for Q1 and Q2)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
VCBO
VCEO
IC
R
胃JA
TJ, Tstg
PD
Marking
7A
7B
7C
7D
7E
7F
7G
7H
7J
7K
7L
7M
R1 (K)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
Value
50
50
100
Unit
Vdc
Vdc
mAdc
擄C/W
擄C
mW
THERMAL CHARACTERISTICS
Thermal Resistance 鈥?Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Total Package Dissipation @ TA = 25擄C(1)
833
鈥?65 to +150
*150
DEVICE MARKING AND RESISTOR VALUES: MUN5211DW1T1 SERIES
Device
MUN5211DW1T1
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1(2)
MUN5216DW1T1(2)
MUN5230DW1T1(2)
MUN5231DW1T1(2)
MUN5232DW1T1(2)
MUN5233DW1T1(2)
MUN5234DW1T1(2)
MUN5235DW1T1(2)
R2 (K)
10
22
47
47
鈭?/div>
鈭?/div>
1.0
2.2
4.7
47
47
47
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
MUN5211DW1T1 產(chǎn)品屬性
10
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 陣列﹐預(yù)偏壓式
-
2 個(gè) NPN 預(yù)偏壓式（雙）
100mA
50V
10k
10k
35 @ 5mA，10V
250mV @ 300µA，10mA
500nA
-
250mW
表面貼裝
6-TSSOP，SC-88，SOT-363
SOT-363
剪切帶 (CT)
MUN5211DW1T1OSCT
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