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MUN5111DW1T1 Datasheet

  • MUN5111DW1T1

  • Dual Bias Resistor Transistors

  • 176.09KB

  • 20頁

  • ONSEMI

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MUN5111DW1T1 Series
Preferred Devices
Dual Bias Resistor
Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
http://onsemi.com
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base鈭抏mitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the MUN5111DW1T1 series,
two BRT devices are housed in the SOT鈭?63 package which is ideal
for low鈭抪ower surface mount applications where board space is at a
premium.
(3)
R
1
Q
1
(2)
R
2
(1)
Q
2
R
2
(4)
R
1
(5)
(6)
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and Reel
6
1
MAXIMUM RATINGS
(T
A
= 25擄C unless otherwise noted, common for Q
1
and Q
2
)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
鈭?0
鈭?0
鈭?00
Unit
Vdc
Vdc
mAdc
SOT鈭?63
CASE 419B
STYLE 1
MARKING DIAGRAM
6
XX
d
1
XX = Specific Device Code
d
= Date Code
=
(See Page 2)
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance 鈭?/div>
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance 鈭?/div>
Junction-to-Ambient
Thermal Resistance 鈭?/div>
Junction-to-Lead
Junction and Storage
Temperature Range
1. FR鈭? @ Minimum Pad
2. FR鈭? @ 1.0 x 1.0 inch Pad
Symbol
P
D
Max
187 (Note 1.)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
670 (Note 1.)
490 (Note 2.)
Max
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
493 (Note 1.)
325 (Note 2.)
188 (Note 1.)
208 (Note 2.)
鈭?5 to +150
Unit
mW
mW/擄C
擄C/W
R
胃JA
DEVICE MARKING INFORMATION
Unit
mW
mW/擄C
擄C/W
擄C/W
擄C
Preferred
devices are recommended choices for future use
and best overall value.
See specific marking information in the device marking table
on page 2 of this data sheet.
Symbol
P
D
R
胃JA
R
胃JL
T
J
, T
stg
漏
Semiconductor Components Industries, LLC, 2003
1
December, 2003 鈭?Rev. 5
Publication Order Number:
MUN5111DW1T1/D

MUN5111DW1T1 產(chǎn)品屬性

  • ON Semiconductor

  • Transistors Switching (Resistor Biased)

  • Dual

  • PNP

  • 10 KOhms

  • 1

  • SMD/SMT

  • SC-88-6

  • 50 V

  • - 0.1 A

  • 100 mA

  • 250 mW

  • + 150 C

  • Reel

  • - 55 C

  • 3000

MUN5111DW1T1相關(guān)型號PDF文件下載

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  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI [ON...
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI
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    Dual Bias Resistor Transistors
    ONSEMI [ON...
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI
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    Dual Bias Resistor Transistors
    ONSEMI [ON...
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI [ON...
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI [ON...
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI [ON...
  • 英文版
    Dual Bias Resistor Transistors
    LRC
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    Dual Bias Resistor Trasnsistors
    MOTOROLA
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI
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    Dual Bias Resistor Transistors
    ONSEMI [ON...
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    Dual Bias Resistor Transistors
    LRC [Lesha...
  • 英文版
    Dual Bias Resistor Trasnsistors
    MOTOROLA [...
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    Dual Bias Resistor Transistors
    ONSEMI
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    Dual Bias Resistor Transistors
    ONSEMI [ON...

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