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MUN22XXT1 Datasheet

  • MUN22XXT1

  • NPN SILICON BIAS RESISTOR TRANSISTOR

  • 12頁

  • ONSEMI

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MUN2211T1/D
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base鈥揺mitter resistor. The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC鈥?9 package which is designed
for low power surface mount applications.
鈥?/div>
Simplifies Circuit Design
鈥?/div>
Reduces Board Space
鈥?/div>
Reduces Component Count
鈥?/div>
The SC鈥?9 package can be soldered using wave or reflow.
The modified gull鈥搘inged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
鈥?/div>
Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
R1
PIN2 R2
BASE
(INPUT)
PIN1
EMITTER
(GROUND)
PIN3
COLLECTOR
(OUTPUT)
MUN2211T1
SERIES
Motorola Preferred Devices
NPN SILICON
BIAS RESISTOR
TRANSISTOR
3
2
1
CASE 318D鈥?3, STYLE 1
(SC鈥?9)
MAXIMUM RATINGS
(TA = 25擄C unless otherwise noted)
Rating
Collector鈥揃ase Voltage
Collector鈥揈mitter Voltage
Collector Current
Total Power Dissipation @ TA = 25擄C(1)
Derate above 25擄C
Symbol
VCBO
VCEO
IC
PD
Value
50
50
100
*200
1.6
Unit
Vdc
Vdc
mAdc
mW
mW/擄C
THERMAL CHARACTERISTICS
Thermal Resistance 鈥?Junction鈥搕o鈥揂mbient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
R
胃JA
TJ, Tstg
TL
625
鈥?65 to +150
260
10
擄C/W
擄C
擄C
Sec
DEVICE MARKING AND RESISTOR VALUES
Device
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1(2)
MUN2216T1(2)
MUN2230T1(2)
MUN2231T1(2)
MUN2232T1(2)
MUN2233T1(2)
MUN2234T1(2)
Marking
8A
8B
8C
8D
8E
8F
8G
8H
8J
8K
8L
R1 (K)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
R2 (K)
10
22
47
47
鈭?/div>
鈭?/div>
1.0
2.2
4.7
47
47
1. Device mounted on a FR鈥? glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 4
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1

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    Bias Resistor Transistor
    ONSEMI
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    Bias Resistor Transistor
    ONSEMI [ON...
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    NPN SILICON BIAS RESISTOR TRANSISTOR
    ONSEMI
  • 英文版
    NPN SILICON BIAS RESISTOR TRANSISTOR
    ONSEMI [ON...
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    NPN SILICON BIAS RESISTOR TRANSISTOR
    ONSEMI
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    NPN SILICON BIAS RESISTOR TRANSISTOR
    ONSEMI [ON...
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    NPN SILICON BIAS RESISTOR TRANSISTOR
    ONSEMI
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    NPN SILICON BIAS RESISTOR TRANSISTOR
    ONSEMI [ON...
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    NPN SILICON BIAS RESISTOR TRANSISTOR
    ONSEMI
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    NPN SILICON BIAS RESISTOR TRANSISTOR
    ONSEMI [ON...
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    NPN SILICON BIAS RESISTOR TRANSISTOR
    ONSEMI
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    NPN SILICON BIAS RESISTOR TRANSISTOR
    ONSEMI [ON...
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    NPN SILICON BIAS RESISTOR TRANSISTOR
    ONSEMI
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    Bias Resistor Transistor
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    NPN SILICON BIAS RESISTOR TRANSISTOR
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    NPN SILICON BIAS RESISTOR TRANSISTOR
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    Bias Resistor Transistor
    LRC [Lesha...
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    NPN SILICON BIAS RESISTOR TRANSISTOR
    ONSEMI
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    NPN SILICON BIAS RESISTOR TRANSISTOR
    ONSEMI [ON...

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