TMOS E-FET.
鈩?/div>
Power Field Effect Transistor
Designer's
MTY30N50E
Motorola Preferred Device
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
This advanced TMOS power FET is designed to withstand high
energy in the avalanche and commutation modes. This new energy
efficient design also offers a drain鈥搕o鈥搒ource diode with fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters, PWM motor controls,
and other inductive loads. The avalanche energy capability is
specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈥?/div>
IDSS and VDS(on) Specified at Elevated Temperature
D
TMOS POWER FET
30 AMPERES
500 VOLTS
RDS(on) = 0.15 OHM
廬
G
S
CASE 340G鈥?2, STYLE 1
TO鈥?64
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1 M鈩?
Gate鈥揝ource Voltage 鈥?Continuous
Gate鈥揝ource Voltage
鈥?Non鈥揜epetitive (tp
鈮?/div>
10 ms)
Drain Current 鈥?Continuous @ TC = 25擄C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation
Derate above 25擄C
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 30 Apk, L = 10 mH, RG = 25
鈩?/div>
)
Thermal Resistance 鈥?Junction to Case
Thermal Resistance
鈥?Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
Symbol
VDSS
VDGR
VGS
VGSM
ID
IDM
PD
TJ, Tstg
EAS
R
胃JC
R
胃JA
TL
Value
500
500
鹵
20
鹵
40
30
80
300
2.38
鈥?55 to 150
3000
0.42
40
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/擄C
擄C
mJ
擄C/W
擄C
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
E鈥揊ET and Designer鈥檚 are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1995
1
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英文版
TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM
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英文版
TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM
MOTOROLA [...
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英文版
TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM
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英文版
TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM
MOTOROLA [...
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英文版
TMOS POWER FET 30 AMPERES 500 VOLTS
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英文版
TMOS POWER FET 30 AMPERES 500 VOLTS
MOTOROLA
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