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MTY14N100E Datasheet

  • MTY14N100E

  • TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM

  • 8頁(yè)

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTY14N100E/D
鈩?/div>
Data Sheet
TMOS E-FET.
鈩?/div>
Power Field Effect Transistor
Designer's
MTY14N100E
Motorola Preferred Device
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
This advanced TMOS power FET is designed to withstand high
energy in the avalanche and commutation modes. This new energy
efficient design also offers a drain鈥搕o鈥搒ource diode with fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters, PWM motor controls, and
other inductive loads. The avalanche energy capability is specified to
eliminate the guesswork in designs where inductive loads are
switched and offer additional safety margin against unexpected
voltage transients.
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈥?/div>
IDSS and VDS(on) Specified at Elevated Temperature
G
S
D
TMOS POWER FET
14 AMPERES
1000 VOLTS
RDS(on) = 0.80 OHM
廬
CASE 340G鈥?2, STYLE 1
TO鈥?64
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
鈥?Single Pulse (tp
鈮?/div>
50
碌s)
Drain Current 鈥?Continuous
鈥?Continuous @ TC = 100擄C
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation
Derate above 25擄C
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 14 Apk, L = 10 mH, RG = 25
鈩?/div>
)
Thermal Resistance 鈥?Junction to Case
Thermal Resistance
鈥?Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
R
胃JC
R
胃JA
TL
Value
1000
1000
鹵
20
鹵
40
14
8.7
49
300
2.4
鈥?55 to 150
980
0.42
30
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/擄C
擄C
mJ
擄C/W
擄C
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
E鈥揊ET and Designer鈥檚 are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1996
1

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