TMOS E-FET.
鈩?/div>
Power Field Effect Transistor
TO-247 with Isolated Mounting Hole
Designer's
MTW8N60E
Motorola Preferred Device
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage鈥揵locking capability without
degrading performance over time. In addition, this advanced TMOS
E鈥揊ET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain鈥搕o鈥搒ource diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
鈥?/div>
Robust High Voltage Termination
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈥?/div>
IDSS and VDS(on) Specified at Elevated Temperature
鈥?/div>
Isolated Mounting Hole Reduces Mounting Hardware
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage 鈥?Continuous
Gate鈥揝ource Voltage
鈥?Non鈥揜epetitive (tp
鈮?/div>
10 ms)
Drain Current 鈥?Continuous
Drain Current
鈥?Continuous @ 100擄C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation
Derate above 25擄C
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 100 Vdc, VGS = 10 Vdc, IL = 24 Apk, L = 3.0 mH, RG = 25
鈩?
Thermal Resistance 鈥?Junction to Case
Thermal Resistance
鈥?Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
R
胃JC
R
胃JA
TL
TMOS POWER FET
8.0 AMPERES
600 VOLTS
RDS(on) = 0.55 OHM
廬
D
G
S
CASE 340K鈥?1, Style 1
TO鈥?47AE
Value
600
600
鹵
20
鹵
40
8.0
6.4
24
180
1.43
鈥?55 to 150
864
0.70
40
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/擄C
擄C
mJ
擄C/W
擄C
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
E鈥揊ET and Designer鈥檚 are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 4
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1996
1
MTW8N60E/D相關(guān)型號(hào)PDF文件下載
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英文版
TMOS E FET POWER FIELD EFFECT TRANSISTOR
-
英文版
TMOS E FET POWER FIELD EFFECT TRANSISTOR
MOTOROLA [...
-
英文版
TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM
-
英文版
TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM
MOTOROLA [...
-
英文版
TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM
-
英文版
TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM
MOTOROLA [...
MOTOROLA
1
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