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MTP60N05HDL Datasheet

  • MTP60N05HDL

  • TMOS POWER FET 60 AMPERES 50 VOLTS RDS(on) = 0.014 OHM

  • 8頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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HDTMOS E-FET.
鈩?/div>
Power Field Effect Transistor
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
This advanced high鈥揷ell density HDTMOS power FET is
designed to withstand high energy in the avalanche and commuta-
tion modes. The new energy efficient design also offers a
drain鈥搕o鈥搒ource diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a Dis-
crete Fast Recovery Diode
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈥?/div>
IDSS and VDS(on) Specified at Elevated Temperature
MTP60N05HDL
Motorola Preferred Device
TMOS POWER FET
60 AMPERES
50 VOLTS
RDS(on) = 0.014 OHM
鈩?/div>
D
G
CASE 221A鈥?6, Style 5
TO鈥?20AB
S
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
鈥?Non鈥揜epetitive (tp
鈮?/div>
10 ms)
Drain Current 鈥?Continuous
鈥?Continuous @ 100擄C
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation
Derate above 25擄C
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 60 Apk, L = 0.3 mH, RG = 25
鈩?
Thermal Resistance 鈥?Junction to Case
鈥?Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from Case for 5 Seconds
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
R
胃JC
R
胃JA
TL
Value
50
50
鹵
15
鹵
20
60
42
180
150
1.0
鈥?55 to 175
540
1.0
62.5
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/擄C
擄C
mJ
擄C/W
擄C
E鈥揊ET and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Preferred
devices are Motorola recommended choices for future use and best overall value.
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1997
1

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