音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

MTP3N60E Datasheet

  • MTP3N60E

  • TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS

  • 8頁

  • MOTOROLA   MOTOROLA

掃碼查看芯片數(shù)據(jù)手冊

上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTP3N60E/D
鈩?/div>
Data Sheet
TMOS E-FET.
鈩?/div>
High Energy Power FET
Designer's
MTP3N60E
Motorola Preferred Device
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
This advanced high voltage TMOS E鈥揊ET is designed to
withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain鈥搕o鈥搒ource diode
with fast recovery time. Designed for high voltage, high speed
switching applications such as power supplies, PWM motor
controls and other inductive loads, the avalanche energy capability
is specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
鈥?/div>
Avalanche Energy Capability Specified at Elevated
Temperature
鈥?/div>
Low Stored Gate Charge for Efficient Switching
鈥?/div>
Internal Source鈥搕o鈥揇rain Diode Designed to Replace External
Zener Transient Suppressor 鈥?Absorbs High Energy in the
Avalanche Mode
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to Discrete
Fast Recovery Diode
D
TMOS POWER FET
3.0 AMPERES
600 VOLTS
RDS(on) = 2.2 OHMS
廬
G
S
CASE 221A鈥?9, Style 5
TO-220AB
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage 鈥?Continuous
Gate鈥揝ource Voltage
鈥?Non鈥搑epetitive
Drain Current 鈥?Continuous
Drain Current
鈥?Continuous @ 100擄C
Drain Current
鈥?Pulsed
Total Power Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Temperature Range
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
Value
600
600
鹵
20
鹵
40
3.0
2.4
14
75
0.6
鈥?55 to 150
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Watts
W/擄C
擄C
UNCLAMPED DRAIN鈥揟O鈥揝OURCE AVALANCHE CHARACTERISTICS
(TJ < 150擄C)
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?TJ = 25擄C
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy
鈥?TJ = 100擄C
Repetitive Pulse Drain鈥搕o鈥揝ource Avalanche Energy
WDSR(1)
WDSR(2)
290
46
7.5
mJ
THERMAL CHARACTERISTICS
Thermal Resistance 鈥?Junction to Case擄
Thermal Resistance
鈥?Junction to Ambient擄
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
(1) VDD = 50 V, ID = 3.0 A
(2) Pulse Width and frequency is limited by TJ(max) and thermal response
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
R
胃JC
R
胃JA
TL
1.67
62.5
260
擄C/W
擄C
E鈥揊ET and Designer鈥檚 are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
漏
Motorola TMOS
Motorola, Inc. 1997
Power MOSFET Transistor Device Data
1

MTP3N60E相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET
    STMICROELECTRONICS
  • 英文版
    TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM
    MOTOROLA
  • 英文版
    TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM
    MOTOROLA [...
  • 英文版
    N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET
    STMICROELECTRON...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 120V V(BR)DSS | 3A I(D) | ...
    ETC
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD ...
  • 英文版
    TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS
    MOTOROLA
  • 英文版
    TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS
    MOTOROLA [...
  • 英文版
    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
    STMICROELECTRON...
  • 英文版
    12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-...
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET
    STMICROELECTRON...
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM
    MOTOROLA
  • 英文版
    TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM
    MOTOROLA [...
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買家服務(wù)：
賣家服務(wù)：
技術(shù)客服：

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時間周一至周五
9:00-17:30

關(guān)注官方微信號，
第一時間獲取資訊。

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見，您的參與是維庫提升服務(wù)的動力！意見一經(jīng)采納，將有感恩紅包奉上哦！