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MTP3N50 Datasheet

  • MTP3N50

  • TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS

  • 8頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTP3N50E/D
鈩?/div>
Data Sheet
TMOS E-FET.
鈩?/div>
High Energy Power FET
Designer's
MTP3N50E
Motorola Preferred Device
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
This advanced high voltage TMOS E鈥揊ET is designed to
withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain鈥搕o鈥搒ource diode
with fast recovery time. Designed for high voltage, high speed
switching applications such as power supplies, PWM motor
controls and other inductive loads, the avalanche energy capability
is specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
鈥?/div>
Avalanche Energy Capability Specified at Elevated
Temperature
鈥?/div>
Low Stored Gate Charge for Efficient Switching
鈥?/div>
Internal Source鈥搕o鈥揇rain Diode Designed to Replace External
Zener Transient Suppressor 鈥?Absorbs High Energy in the
Avalanche Mode
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to Discrete
Fast Recovery Diode
TMOS POWER FET
3.0 AMPERES
500 VOLTS
RDS(on) = 3.0 OHMS
廬
D
G
S
CASE 221A鈥?6, Style 5
TO鈥?20AB
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage 鈥?Continuous
Gate鈥揝ource Voltage
鈥?Non鈥搑epetitive (tp
鈮?/div>
50
碌s)
Drain Current 鈥?Continuous
Drain Current
鈥?Pulsed
Total Power Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Temperature Range
Symbol
VDSS
VDGR
VGS
VGSM
ID
IDM
PD
TJ, Tstg
Value
500
500
鹵
20
鹵
40
3.0
10
50
0.4
鈥?65 to 150
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Watts
W/擄C
擄C
UNCLAMPED DRAIN鈥揟O鈥揝OURCE AVALANCHE CHARACTERISTICS
(TJ < 150擄C)
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?TJ = 25擄C
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy
鈥?TJ = 100擄C
Repetitive Pulse Drain鈥搕o鈥揝ource Avalanche Energy
WDSR (1)
WDSR (2)
210
33
5.0
mJ
THERMAL CHARACTERISTICS
Thermal Resistance 鈥?Junction to Case擄
鈥?Junction to Ambient擄
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
(1) VDD = 50 V, ID = 3.0 A
(2) Pulse Width and frequency is limited by TJ(max) and thermal response
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
R
胃JC
R
胃JA
TL
2.5
62.5
260
擄C/W
擄C
E鈥揊ET and Designer鈥檚 are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
漏
Motorola TMOS
Motorola, Inc. 1996
Power MOSFET Transistor Device Data
1

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