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MOTOROLA

Designer's

SEMICONDUCTOR TECHNICAL DATA

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by MTP3055V/D

TMOS

Power Field Effect Transistor

TMOS V is a new technology designed to achieve an on鈥搑esis-

tance area product about one鈥揾alf that of standard MOSFETs. This

new technology more than doubles the present cell density of our

50 and 60 volt TMOS devices. Just as with our TMOS E鈥揊ET

designs, TMOS V is designed to withstand high energy in the

avalanche and commutation modes. Designed for low voltage, high

speed switching applications in power supplies, converters and

power motor controls, these devices are particularly well suited for

bridge circuits where diode speed and commutating safe operating

areas are critical and offer additional safety margin against

unexpected voltage transients.

New Features of TMOS V

鈥?/div>

On鈥搑esistance Area Product about One鈥揾alf that of Standard

MOSFETs with New Low Voltage, Low RDS(on) Technology

鈥?/div>

Faster Switching than E鈥揊ET Predecessors

Features Common to TMOS V and TMOS E鈥揊ETS

鈥?/div>

Avalanche Energy Specified

鈥?/div>

IDSS and VDS(on) Specified at Elevated Temperature

鈥?/div>

Static Parameters are the Same for both TMOS V and

TMOS E鈥揊ET

鈩?/div>

Data Sheet

V

鈩?/div>

MTP3055V

Motorola Preferred Device

N鈥揅hannel Enhancement鈥揗ode Silicon Gate

TMOS POWER FET

12 AMPERES

60 VOLTS

RDS(on) = 0.15 OHM

TM

D

G

S

CASE 221A鈥?6, Style 5

TO鈥?20AB

MAXIMUM RATINGS

(TC = 25擄C unless otherwise noted)

Rating

Drain鈥揝ource Voltage

Drain鈥揋ate Voltage (RGS = 1.0 M鈩?

Gate鈥揝ource Voltage 鈥?Continuous

Gate鈥揝ource Voltage

鈥?Non鈥揜epetitive (tp

鈮?/div>

10 ms)

Drain Current 鈥?Continuous @ 25擄C

Drain Current

鈥?Continuous @ 100擄C

Drain Current

鈥?Single Pulse (tp

鈮?/div>

10

碌s)

Total Power Dissipation @ 25擄C

Derate above 25擄C

Operating and Storage Temperature Range

Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C

(VDD = 25 Vdc, VGS = 10 Vdc, IL = 12 Apk, L = 1.0 mH, RG = 25

鈩?

Thermal Resistance 鈥?Junction to Case

Thermal Resistance

鈥?Junction to Ambient

Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds

Symbol

VDSS

VDGR

VGS

VGSM

ID

IDM

PD

TJ, Tstg

EAS

R

胃JC

R

胃JA

TL

Value

60

鹵

20

鹵

25

12

7.3

37

48

0.32

鈥?55 to 175

72

3.13

62.5

260

Unit

Vdc

Vpk

Adc

Apk

Watts

W/擄C

擄C

mJ

擄C/W

擄C

Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions

鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.

E鈥揊ET, Designer鈥檚 and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred

devices are Motorola recommended choices for future use and best overall value.

REV 2

漏

Motorola TMOS

Motorola, Inc. 1996

Power MOSFET Transistor Device Data

1

標(biāo)準(zhǔn)包裝
50
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
-
FET 型
MOSFET N 通道，金屬氧化物
FET 特點(diǎn)
標(biāo)準(zhǔn)型
漏極至源極電壓(Vdss)
60V
電流 - 連續(xù)漏極(Id) @ 25° C
12A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
150 毫歐 @ 6A，10V
Id 時(shí)的 Vgs(th)（最大）
4V @ 250µA
閘電荷(Qg) @ Vgs
17nC @ 10V
輸入電容 (Ciss) @ Vds
500pF @ 25V
功率 - 最大
48W
安裝類型
通孔
封裝/外殼
TO-220-3
供應(yīng)商設(shè)備封裝
TO-220AB
包裝
管件
其它名稱
MTP3055VOS

MTP3055V相關(guān)型號PDF文件下載

型號

版本

描述

廠商

下載
MTP3055

英文版

N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET

MTP3055
MTP3055

英文版

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM

MTP3055
MTP3055

英文版

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM

MOTOROLA [...

MTP3055
MTP3055

英文版

N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET

STMICROELECTRON...

MTP3055
MTP3N12

英文版

TRANSISTOR | MOSFET | N-CHANNEL | 120V V(BR)DSS | 3A I(D) | ...

ETC

MTP3N12
MTP3N35

英文版

N-Channel Power MOSFETs, 3.0 A, 350-400 V

FAIRCHILD

MTP3N35
MTP3N35

英文版

N-Channel Power MOSFETs, 3.0 A, 350-400 V

FAIRCHILD ...

MTP3N35
MTP3N40

英文版

N-Channel Power MOSFETs, 3.0 A, 350-400 V

FAIRCHILD

MTP3N40
MTP3N40

英文版

N-Channel Power MOSFETs, 3.0 A, 350-400 V

FAIRCHILD ...

MTP3N40
MTP3N50

英文版

TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS

MTP3N50
MTP3N50

英文版

TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS

MOTOROLA [...

MTP3N50
MTP3N60

英文版

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

MTP3N60
MTP3N60

英文版

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STMICROELECTRON...

MTP3N60
MTP3055A

英文版

12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-...

MTP3055A
MTP3055E

英文版

N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET

MTP3055E
MTP3055E

英文版

N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET

STMICROELECTRON...

MTP3055E
MTP3055V

英文版

N-Channel Enhancement Mode Field Effect Transistor

FAIRCHILD

MTP3055V
MTP3055V

英文版

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM

MTP3055V
MTP3055V

英文版

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM

MOTOROLA [...

MTP3055V
MTP3055V

英文版

N-Channel Enhancement Mode Field Effect Transistor

FAIRCHILD ...

MTP3055V

MTP3055V Datasheet

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