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MTP12N10E Datasheet

  • MTP12N10E

  • TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM

  • 6頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTP12N10E/D
鈩?/div>
Data Sheet
TMOS E-FET.
鈩?/div>
Power Field Effect Transistor
Designer's
MTP12N10E
Motorola Preferred Device
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
This advanced TMOS E鈥揊ET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain鈥搕o鈥搒ource diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
鈥?/div>
Designed to Eliminate the Need for External Zener Transient
Suppressor 鈥?Absorbs High Energy in the Avalanche Mode
鈥?/div>
Commutating Safe Operating Area (CSOA) Specified for Use
in Half and Full Bridge Circuits
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈥?/div>
IDSS and VDS(on) Specified at Elevated Temperature
TMOS POWER FET
12 AMPERES
100 VOLTS
RDS(on) = 0.16 OHM
廬
D
G
S
CASE 221A鈥?6, Style 5
TO鈥?20AB
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage 鈥?Continuous
Gate鈥揝ource Voltage
鈥?Single Pulse (tp
鈮?/div>
50
碌s)
Drain Current 鈥?Continuous
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Temperature Range
Symbol
VDSS
VDGR
VGS
ID
IDM
PD
TJ, Tstg
Value
100
100
鹵
20
鹵
40
12
30
79
0.53
鈥?55 to 175
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
UNCLAMPED DRAIN鈥揟O鈥揝OURCE AVALANCHE CHARACTERISTICS
(TJ
鈮?/div>
175擄C)
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 25 V, VGS = 10 V, L = 4.03 mH, RG = 25
鈩?
Peak IL = 12 A)
(See Figures 15, 16 and 17)
EAS
290
mJ
THERMAL CHARACTERISTICS
Thermal Resistance 鈥?Junction to Case
Thermal Resistance
鈥?Junction to Ambient擄
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
R
胃JC
R
胃JA
TL
1.9
62.5
260
擄C/W
擄C
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
E鈥揊ET and Designer鈥檚 are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
漏
Motorola TMOS
Motorola, Inc. 1996
Power MOSFET Transistor Device Data
1

MTP12N10E相關(guān)型號(hào)PDF文件下載

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  • 英文版
    TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm
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  • 英文版
    TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm
    MOTOROLA [...
  • 英文版
    TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM
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  • 英文版
    TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM
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    Power Field Effect Transister N-Channel Enhancement Mode Sil...
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  • 英文版
    N-Channel Power MOSFETs, 11 A, 60-100 V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 11 A, 60-100 V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 11 A, 60-100 V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 11 A, 60-100 V
    FAIRCHILD ...
  • 英文版
    POWER FIELD EFFECT TRANSISTOR
    MOTOROLA
  • 英文版
    POWER FIELD EFFECT TRANSISTOR
    MOTOROLA [...
  • 英文版
    POWER FIELD EFFECT TRANSISTOR
    MOTOROLA
  • 英文版
    POWER FIELD EFFECT TRANSISTOR
    MOTOROLA [...
  • 英文版
    TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
    MOTOROLA
  • 英文版
    TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
    MOTOROLA [...
  • 英文版
    TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
    MOTOROLA
  • 英文版
    TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
    MOTOROLA [...
  • 英文版
    N-Channel Power MOSFETs, 12A, 150-200 V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 12A, 150-200 V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 12A, 150-200 V
    FAIRCHILD

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