鈮?/div>
10
碌s)
Total Power Dissipation @ 25擄C
Derate above 25擄C
Total Power Dissipation @ TA = 25擄C, when
mounted to minimum recommended pad
size
Operating and Storage Temperature
Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche
Energy 鈥?Starting TJ = 25擄C
(VDD = 25 Vdc, VGS = 10 Vdc,
IL = 12 Apk, L = 1.0 mH, RG = 25
鈩?/div>
)
Thermal Resistance
鈥?Junction to Case
鈥?Junction to Ambient
鈥?Junction to Ambient, when mounted to
minimum recommended pad size
Maximum Temperature for Soldering
Purposes, 1/8鈥?from case for 10
seconds
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
Value
60
60
鹵
20
鹵
25
12
7.3
37
48
0.32
1.75
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/擄C
Watts
4
1 2
3
Y
WW
T
CASE 369A
DPAK
STYLE 2
= Year
= Work Week
= MOSFET
YWW
T
3055V
G
S
http://onsemi.com
12 AMPERES
60 VOLTS
RDS(on) = 150 m鈩?/div>
N鈥揅hannel
D
MARKING
DIAGRAM
TJ, Tstg
EAS
鈥?5 to
175
72
擄C
mJ
PIN ASSIGNMENT
擄C/W
R
胃JC
R
胃JA
R
胃JA
TL
3.13
100
71.4
260
擄C
4
Drain
1
Gate
2
Drain
3
Source
ORDERING INFORMATION
Device
MTD3055V
MTD3055V1
MTD3055VT4
Package
DPAK
DPAK
DPAK
Shipping
75 Units/Rail
75 Units/Rail
2500 Tape & Reel
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 2000
1
November, 2000 鈥?Rev. 3
Publication Order Number:
MTD3055V/D
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