鈮?/div>
10
ms)
Total Power Dissipation
Derate above 25擄C
Total Power Dissipation @ 25擄C (Note 2)
Operating and Storage Temperature
Range
Single Pulse Drain鈭抰o鈭扴ource Avalanche
Energy 鈭?Starting T
J
= 25擄C
(V
DD
= 25 Vdc, V
GS
= 10 Vdc, Peak
I
L
= 12 Apk, L = 3.0 mH, R
G
= 25
W)
Thermal Resistance
鈭?Junction to Case
鈭?Junction to Ambient (Note 1)
鈭?Junction to Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8鈥?from case for 10
seconds
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D
I
D
I
DM
P
D
Value
60
60
鹵
20
鹵
25
12
8.0
42
60
0.4
2.1
鈭?5 to
175
216
Unit
Vdc
Vdc
G
P鈭扖hannel
D
S
Vdc
Vpk
Adc
Apk
Watts
W/擄C
Watts
擄C
mJ
4
DPAK鈭?
CASE 369D
STYLE 2
1
擄C
2
3
4
1 2
3
DPAK鈭?
CASE 369C
STYLE 2
T
J
, T
stg
E
AS
擄C/W
R
qJC
R
qJA
R
qJA
T
L
2.5
100
71.4
260
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using the 0.5 sq.in. pad size.
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 7 of this data sheet.
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 7 of this data sheet.
漏
Semiconductor Components Industries, LLC, 2004
1
April, 2004 鈭?Rev. 7
Publication Order Number:
MTD2955V/D