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MTD20N06HDLT4G Datasheet

  • MTD20N06HDLT4G

  • Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel ...

  • 8頁

  • ONSEMI

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MTD20N06HDL
Preferred Device
Power MOSFET
20 Amps, 60 Volts, Logic Level
N鈭扖hannel DPAK
This advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain鈭抰o鈭抯ource diode with a fast
recovery time. Designed for low鈭抳oltage, high鈭抯peed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits, and
inductive loads. The avalanche energy capability is specified to
eliminate the guesswork in designs where inductive loads are
switched, and to offer additional safety margin against unexpected
voltage transients.
Features
http://onsemi.com
20 AMPERES, 60 VOLTS
R
DS(on)
= 45 mW
N鈭扖hannel
D
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Source鈭抰o鈭扗rain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈥?/div>
I
DSS
and V
DS(on)
Specified at Elevated Temperature
鈥?/div>
Pb鈭扚ree Package is Available
MAXIMUM RATINGS
(T
C
= 25擄C unless otherwise noted)
Rating
Drain鈭扴ource Voltage
Drain鈭扜ate Voltage (R
GS
= 1.0 MW)
Gate鈭扴ource Voltage
鈭?/div>
Continuous
鈭?/div>
Non鈭扲epetitive (t
p
鈮?/div>
10 ms)
Drain Current
鈭?/div>
Continuous @ 25擄C
Drain Current
鈭?/div>
Continuous @ 100擄C
Drain Current
鈭?/div>
Single Pulse (t
p
鈮?/div>
10
ms)
Total Power Dissipation
Derate above 25擄C
Total Power Dissipation @ T
C
= 25擄C (Note 1)
Operating and Storage Temperature Range
Single Pulse Drain鈭抰o鈭扴ource Avalanche
Energy
鈭?/div>
Starting T
J
= 25擄C
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
I
L
= 20 Apk, L = 1.0 mH, R
G
= 25
W)
Thermal Resistance
鈭?/div>
Junction鈭抰o鈭扖ase
鈭?/div>
Junction鈭抰o鈭扐mbient (Note 1)
鈭?/div>
Junction鈭抰o鈭扐mbient (Note 2)
Maximum Temperature for Soldering
Purposes, 1/8鈥?from case for 10 seconds
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D
I
D
Value
60
60
鹵
15
鹵
20
20
12
60
40
0.32
1.75
鈭?5
to
150
200
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
W
W/擄C
W
擄C
mJ
1 2
3
4
G
S
MARKING DIAGRAM & PIN ASSIGNMENTS
Gate 1
Drain 2
DPAK
CASE 369C
STYLE 2
Source 3
YWW
20N
06HLG
4
Drain
I
DM
P
D
T
J
, T
stg
E
AS
Y
WW
20N06HL
G
= Year
= Work Week
= Device Code
= Pb鈭扚ree Package
ORDERING INFORMATION
Device
Package
DPAK
DPAK
Shipping
鈥?/div>
75 Units/Rail
2500 Tape & Reel
R
JC
R
JA
R
JA
T
L
3.13
100
71.4
260
擄C/W
MTD20N06HDL
MTD20N06HDLT4
MTD20N06HDLT4G
擄C
DPAK
2500 Tape & Reel
(Pb鈭扚ree)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR鈭? board using the minimum recommended
pad size.
2. When surface mounted to an FR鈭? board using the 0.5 sq.in. drain pad size.
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 2006
August, 2006
鈭?/div>
Rev. 6
1
Publication Order Number:
MTD20N06HDL/D

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