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MTB75N06HD Datasheet

  • MTB75N06HD

  • TMOS POWER FET 75 AMPERES 60 VOLTS

  • 12頁(yè)

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTB75N06HD/D
鈩?/div>
Data Sheet
HDTMOS E-FET.
鈩?/div>
High Energy Power FET
D2PAK for Surface Mount
Designer's
MTB75N06HD
Motorola Preferred Device
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
The D2PAK package has the capability of housing a larger die
than any existing surface mount package which allows it to be used
in applications that require the use of surface mount components
with higher power and lower RDS(on) capabilities. This advanced
high鈥揷ell density HDTMOS power FET is designed to withstand
high energy in the avalanche and commutation modes. This new
energy efficient design also offers a drain鈥搕o鈥搒ource diode with a
fast recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
TMOS POWER FET
75 AMPERES
60 VOLTS
RDS(on) = 10 mOHM
鈩?/div>
D
G
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈥?/div>
IDSS and VDS(on) Specified at Elevated Temperature
鈥?/div>
Short Heatsink Tab Manufactured 鈥?Not Sheared
鈥?/div>
Specially Designed Leadframe for Maximum Power Dissipation
鈥?/div>
Available in 24 mm 13鈥搃nch/800 Unit Tape & Reel, Add T4 Suffix to Part Number
CASE 418B鈥?2, Style 2
D2PAK
S
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Gate鈥搕o鈥揝ource Voltage
鈥?Non鈥揜epetitive (tp
鈮?/div>
10 ms)
Drain Current 鈥?Continuous
Drain Current
鈥?Continuous @ 100擄C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation
Derate above 25擄C
Total Power Dissipation @ TC = 25擄C (1)
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 25 Vdc, VGS = 10 Vdc, IL = 75 Apk, L = 0.177 mH, RG = 25
鈩?
Thermal Resistance 鈥?Junction to Case
Thermal Resistance
鈥?Junction to Ambient
Thermal Resistance
鈥?Junction to Ambient (1)
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
Value
60
60
鹵
20
鹵
30
75
50
225
125
1.0
2.5
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/擄C
Watts
擄C
mJ
擄C/W
鈥?55 to 150
EAS
R
胃JC
R
胃JA
R
胃JA
TL
500
1.0
62.5
50
260
擄C
E鈥揊ET, Designer鈥檚 and HDTMOS are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1995
1

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