2 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
FLASH MEMORY
MT28F322D20
MT28F322D18
Low Voltage, Extended Temperature
0.18碌m Process Technology
FEATURES
鈥?Flexible dual-bank architecture
鈥?Support for true concurrent operation with zero
latency
鈥?Read bank
a
during program bank
b
and vice versa
鈥?Read bank
a
during erase bank
b
and vice versa
鈥?Basic configuration:
Seventy-one erasable blocks
鈥?Bank
a
(8Mb for data storage)
鈥?Bank
b
(24Mb for program storage)
鈥?V
CC
, V
CC
Q, V
PP
voltages
鈥?1.70V (MIN), 1.90V (MAX) V
CC
, V
CC
Q
(MT28F322D18 only)
鈥?1.80V V
CC
, V
CC
Q (MIN); 2.20V V
CC
(MAX)and 2.25V
V
CC
Q (MAX) (MT28F322D20 only)
鈥?0.9V (TYP) V
PP
(in-system PROGRAM/ERASE)
鈥?12V 鹵5% (HV) V
PP
tolerant (factory programming
compatibility)
鈥?Random access time: 70ns/80ns @ 1.70V V
CC
鈥?Burst Mode read access (MT28F322D20)
鈥?MAX clock rate: 54 MHz (
t
CLK = 18.5ns)
鈥?Burst latency: 70ns @ 1.80V V
CC
and 54 MHz
鈥?/div>
t
ACLK: 17ns @ 1.80V V
CC
and 54 MHz
鈥?Page Mode read access
1
鈥?Eight-word page
鈥?Interpage read access: 70ns/80ns @ 1.80V
鈥?Intrapage read access: 30ns @ 1.80V
鈥?Low power consumption (V
CC
= 2.20V)
鈥?Asynchronous READ < 15mA (MAX)
鈥?Standby < 50碌A(chǔ)
鈥?Automatic power saving feature (APS)
鈥?Enhanced write and erase suspend options
鈥?ERASE-SUSPEND-to-READ within same bank
鈥?PROGRAM-SUSPEND-to-READ within same bank
鈥?ERASE-SUSPEND-to-PROGRAM within same bank
鈥?Dual 64-bit chip protection registers for security
purposes
鈥?Cross-compatible command support
鈥?Extended command set
鈥?Common flash interface
鈥?PROGRAM/ERASE cycle
鈥?100,000 WRITE/ERASE cycles per block
NOTE:
1. Data based on MT28F322D20 device.
2. A 鈥?鈥?in the part mark represents two different
frequencies: 54 MHz (MT28F322D20) or 52 MHz
(MT28F322D18)
2 Meg x 16 Async/Page/Burst Flash Memory
MT28F322D20FH_4.p65 鈥?Rev. 4, Pub. 7/02
BALL ASSIGNMENT
58-Ball FBGA
1
A
B
C
D
E
F
G
A11
2
A8
3
V
SS
4
V
CC
5
V
PP
6
A18
7
A6
8
A4
A12
A9
A20
CLK
RST#
A17
A5
A3
A13
A10
ADV#
WE#
A19
A7
A2
A15
A14
WAIT#
A16
DQ12
WP#
A1
V
CC
Q
DQ15
DQ6
DQ4
DQ2
DQ1
CE#
A0
V
SS
DQ14
DQ13
DQ11
DQ10
DQ9
DQ0
OE#
DQ7
V
SS
Q
DQ5
V
CC
DQ3
V
CC
Q
DQ8
V
SS
Q
Top View
(Ball Down)
NOTE:
See page 7 for Ball Description Table.
See page 43 for mechanical drawing.
OPTIONS
鈥?Timing
70ns access
80ns access
鈥?Frequency
54 MHz
40 MHz
No burst operation
鈥?Boot Block Configuration
Top
Bottom
鈥?Package
58-ball FBGA (8 x 7 ball grid)
鈥?Operating Temperature Range
Extended (-40潞C to +85潞C)
Part Number Example:
MARKING
-70
-80
5
2
4
None
T
B
FH
ET
MT28F322D20FH-804 BET
1
漏2002, Micron Technology, Inc.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
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