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MSQA6V1W5T2G Datasheet

  • MSQA6V1W5T2G

  • ON Semiconductor [Quad Array for ESD Protection]

  • ONSEMI

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MSQA6V1W5T2
Quad Array for
ESD Protection
This quad monolithic silicon voltage suppressor is designed for
applications requiring transient overvoltage protection capability. It is
intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment, and other applications. Its quad junction common
anode design protects four separate lines using only one package.
These devices are ideal for situations where board space is at a
premium.
Features
http://onsemi.com
1
2
3
5
鈥?/div>
SC鈭?8A Package Allows Four Separate Unidirectional
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Configurations
Low Leakage < 1
mA
@ 3 V
Breakdown Voltage: 6.1 V 鈭?7.2 V @ 1 mA
Low Capacitance (90 pF typical)
ESD Protection Meeting IEC1000鈭?鈭?
Pb鈭扚ree Package is Available*
4
Mechanical Characteristics:
Void Free, Transfer鈭扢olded, Thermosetting Plastic Case
Corrosion Resistant Finish, Easily Solderable
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
SC鈭?8A/SOT鈭?23
CASE 419A
MARKING DIAGRAM
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 20
ms
@T
A
鈮?/div>
25擄C (Note 1)
Steady State Power 鈭?1 Diode (Note 2)
Thermal Resistance, Junction鈭抰o鈭扐mbient
Above 25擄C, Derate
Maximum Junction Temperature
Operating Junction and Storage
Temperature Range
ESD Discharge
MIL STD 883C 鈭?Method 3015鈭?
IEC1000鈭?鈭?, Air Discharge
IEC1000鈭?鈭?, Contact Discharge
Lead Solder Temperature (10 s duration)
Symbol
P
pk
150
P
D
R
qJA
T
Jmax
T
J
T
stg
V
PP
16
16
9
T
L
260
擄C
385
325
3.1
150
鈭?5 to +150
W
mW
擄C/W
mW/擄C
擄C
擄C
kV
61 = Device Code
M = Date Code
G
= Pb鈭扚ree Package
(Note: Microdot may be in either location)
Value
Unit
61 M
G
G
ORDERING INFORMATION
Device
MSQA6V1W5T2
MSQA6V1W5T2G
Package
SC鈭?8A
SC鈭?8A
(Pb鈭扚ree)
Shipping
鈥?/div>
3000/Tape & Reel
3000/Tape & Reel
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Non鈭抮epetitive current per Figure 1. Derate per Figure 2.
2. Only 1 diode under power. For all 4 diodes under power, P
D
will be 25%.
Mounted on FR鈭? board with min pad.
*For additional information on our Pb鈭扚ree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
漏
Semiconductor Components Industries, LLC, 2006
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*T2 Suffix Devices are Packaged with Pin 1 Opposing
Sprocket Hole.
1
February, 2006 鈭?Rev. 4
Publication Order Number:
MSQA6V1W5T2/D

MSQA6V1W5T2G 產(chǎn)品屬性

  • 10

  • 過電壓，電流，溫度裝置

  • TVS - 二極管

  • -

  • 3V

  • 6.1V

  • 150W

  • 4 通道陣列 - 單向

  • 表面貼裝

  • 6-TSSOP（5 引線），SC-88A，SOT-353

  • SOT-353

  • Digi-Reel®

  • MSQA6V1W5T2GOSDKR

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