E2G0010-17-41
隆 Semiconductor
MSM514256C/CL
隆 Semiconductor
This version: Jan. 1998
MSM514256C/CL
Previous version: May 1997
262,144-Word
樓
4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM514256C/CL is a 262,144-word
樓
4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MSM514256C/CL achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer
metal CMOS process. The MSM514256C/CL is available in a 20-pin plastic DIP, 26/20-pin plastic
SOJ, or 20-pin plastic ZIP. The MSM514256CL (the low-power version) is specially designed for
lower-power applications.
FEATURES
鈥?262,144-word
樓
4-bit configuration
鈥?Single 5 V power supply,
鹵10%
tolerance
鈥?Input
: TTL compatible, low input capacitance
鈥?Output : TTL compatible, 3-state
鈥?Refresh : 512 cycles/8 ms, 512 cycles/64 ms (L-version)
鈥?Fast page mode, read modify write capability
鈥?/div>
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
鈥?Package options:
20-pin 300 mil plastic DIP
(DIP20-P-300-2.54-W1) (Product : MSM514256C/CL-xxRS)
26/20-pin 300 mil plastic SOJ (SOJ26/20-P-300-1.27) (Product : MSM514256C/CL-xxJS)
20-pin 400 mil plastic ZIP
(ZIP20-P-400-1.27)
(Product : MSM514256C/CL-xxZS)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM514256C/CL-45
MSM514256C/CL-50
MSM514256C/CL-60
MSM514256C/CL-70
Access Time (Max.)
t
RAC
t
AA
t
CAC
t
OEA
45 ns 24 ns 14 ns 14 ns
50 ns 26 ns 14 ns 14 ns
60 ns 30 ns 15 ns 15 ns
70 ns 35 ns 20 ns 20 ns
Cycle Time
Power Dissipation
(Min.)
Operating (Max.) Standby (Max.)
90 ns
100 ns
120 ns
130 ns
468 mW
446 mW
385 mW
330 mW
5.5 mW/
1.1 mW (L-version)
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