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MSM514100DL Datasheet

  • MSM514100DL

  • 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

  • 17頁

  • OKI

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E2G0022-17-41
隆 Semiconductor
MSM514100D/DL
隆 Semiconductor
This version: Jan. 1998
MSM514100D/DL
Previous version: May 1997
4,194,304-Word
樓
1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM514100D/DL is a 4,194,304-word
樓
1-bit dynamic RAM fabricated in Oki's silicon-gate
CMOS technology. The MSM514100D/DL achieves high integration, high-speed operation, and
low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/
single-layer metal CMOS process. The MSM514100D/DL is available in a 26/20-pin plastic SOJ, 20-
pin plastic ZIP, or 26/20-pin plastic TSOP. The MSM514100DL (the low-power version) is specially
designed for lower-power applications.
FEATURES
鈥?4,194,304-word
樓
1-bit configuration
鈥?Single 5 V power supply,
鹵10%
tolerance
鈥?Input
: TTL compatible, low input capacitance
鈥?Output : TTL compatible, 3-state
鈥?Refresh : 1024 cycles/16 ms, 1024 cycles/128 ms (L-version)
鈥?Fast page mode, read modify write capability
鈥?/div>
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
鈥?Multi-bit test mode capability
鈥?Package options:
26/20-pin 300 mil plastic SOJ
(SOJ26/20-P-300-1.27)
(Product : MSM514100D/DL-xxSJ)
20-pin 400 mil plastic ZIP
(ZIP20-P-400-1.27)
(Product : MSM514100D/DL-xxZS)
26/20-pin 300 mil plastic TSOP
(TSOPII26/20-P-300-1.27-K) (Product : MSM514100D/DL-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM514100D/DL-50
MSM514100D/DL-60
MSM514100D/DL-70
Access Time (Max.)
t
RAC
50 ns
60 ns
70 ns
t
AA
25 ns
30 ns
35 ns
t
CAC
13 ns
15 ns
20 ns
Cycle Time
Power Dissipation
(Min.)
Operating (Max.) Standby (Max.)
90 ns
110 ns
130 ns
550 mW
495 mW
440 mW
5.5 mW/
1.1 mW (L-version)
1/17

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