MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MSD6100/D
Dual Switching Diode
Common Cathode
MSD6100
Anode 1
2 Anode
1
2
3
3 Cathode
CASE 29鈥?4, STYLE 3
TO鈥?2 (TO鈥?26AA)
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current
(Pulse Width = 10
碌sec)
Power Dissipation @ TA = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VR
IF
IFM(surge)
PD(1)
TJ, Tstg(1)
Value
100
200
500
625
5.0
鈥?55 to +135
Unit
Vdc
mAdc
mAdc
mW
mW/擄C
擄C
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
(EACH DIODE)
Characteristic
Breakdown Voltage
(I(BR) = 100
碌A(chǔ)dc)
Reverse Current
(VR = 100 Vdc)
(VR = 50 Vdc)
(VR = 50 Vdc, TA = 125擄C)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 100 mAdc)
Capacitance
(VR = 0)
Reverse Recovery Time
(IF = IR = 10 mAdc, VR = 5.0 Vdc, irr = 1.0 mAdc)
Symbol
V(BR)
IR
鈥?/div>
鈥?/div>
鈥?/div>
VF
0.55
0.67
0.75
C
trr
鈥?/div>
鈥?/div>
0.7
0.82
1.1
1.5
4.0
pF
ns
5.0
0.1
50
Vdc
Min
100
Max
鈥?/div>
Unit
Vdc
碌A(chǔ)dc
1. Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: PD = 1.0 W @ TC = 25擄C,
Derate above 25擄C
錚?/div>
8.0 mW/擄C, TJ = 鈥?5 to +150擄C,
胃JC
= 125擄C/W.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1997
1
MSD6100 產(chǎn)品屬性
5,000
分離式半導(dǎo)體產(chǎn)品
二極管，整流器 - 陣列
-
1.1V @ 100mA
5µA @ 100V
200mA（DC）
100V
4ns
標準
小信號 =
1 對共陰極
通孔
TO-226-3、TO-92-3 標準主體
TO-92-3
散裝
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