MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MSD1328鈥揜T1/D
NPN Low Voltage Output
Amplifier Surface Mount
MSD1328-RT1
COLLECTOR
3
Motorola Preferred Device
3
2
MAXIMUM RATINGS
(TA = 25擄C)
Rating
Collector鈥揃ase Voltage
Collector鈥揈mitter Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Collector Current 鈥?Peak
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
IC(P)
2
BASE
Value
25
20
12
500
1000
1
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
1
CASE 318D鈥?3, STYLE 1
SC鈥?9
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
PD
TJ
Tstg
Max
200
150
鈥?55 ~ +150
Unit
mW
擄C
擄C
ELECTRICAL CHARACTERISTICS
(TA = 25擄C)
Characteristic
Collector鈥揈mitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector鈥揃ase Breakdown Voltage
(IC = 10
碌A(chǔ)dc,
IE = 0)
Emitter鈥揃ase Breakdown Voltage
(IE = 10
碌A(chǔ)dc,
IE = 0)
Collector鈥揃ase Cutoff Current
(VCB = 25 Vdc, IE = 0)
DC Current Gain(1)
(VCE = 2.0 Vdc, IC = 500 mAdc)
Collector鈥揈mitter Saturation Voltage (IC = 500 mAdc, IB = 20 mAdc)
Base鈥揈mitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc)
1. Pulse Test: Pulse Width
鈮?/div>
300
碌s,
D.C.
鈮?/div>
2%.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
hFE
VCE(sat)
VBE(sat)
Min
20
25
12
鈥?/div>
200
鈥?/div>
鈥?/div>
Max
鈥?/div>
鈥?/div>
鈥?/div>
0.1
350
0.4
1.2
Unit
Vdc
Vdc
Vdc
碌A(chǔ)dc
鈥?/div>
Vdc
Vdc
DEVICE MARKING
Marking Symbol
1DR
X
The 鈥淴鈥?represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
漏
Motorola, Inc. 1996
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
1
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