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This version: Apr. 13. 1999

Semiconductor

MSC23V43257D-xxBS8

4,194,304-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION

The MSC23V43257D-xxBS8 is a 4,194,304-word x 32-bit CMOS dynamic random access memory module which is

composed of eight 16Mb(4Mx4) DRAMs in TSOP packages mounted with eight decoupling capacitors. This is an

100-pin dual in-line memory module. This module supports any application where high density and large capacity of

storage memory are required.

FEATURES

路 4,194,304-word x 32-bit organization

路 100-pin Dual In-line Memory Module

路 Gold tab

路 Single 3.3V power supply, 鹵0.3V tolerance

路 Input

: LVTTL compatible

路 Output

: LVTTL compatible, 3-state

路 Refresh : 2048cycles/32ms

路 /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability

路 Fast page mode with EDO, read modify write capability

路 Multi-bit test mode capability

路 Serial Presence Detect

PRODUCT FAMILY

Access Time (Max.)

t

RAC

MSC23V43257D-50BS8

MSC23V43257D-60BS8

MSC23V43257D-70BS8

50ns

60ns

70ns

t

AA

25ns

30ns

35ns

t

CAC

13ns

15ns

20ns

t

OEA

13ns

15ns

20ns

Cycle

Time

(Min.)

84ns

104ns

124ns

Power Dissipation (Max.)

Operating

2880mW

2592mW

2304mW

14.4mW

Standby

Family

next

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