MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MSB709鈥揜T1/D
PNP General Purpose Amplifier
Transistor Surface Mount
COLLECTOR
3
MSB709-RT1
Motorola Preferred Device
3
2
1
2
BASE
1
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
MAXIMUM RATINGS
(TA = 25擄C)
Rating
Collector鈥揃ase Voltage
Collector鈥揈mitter Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Collector Current 鈥?Peak
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
IC(P)
Value
鈥?60
鈥?45
鈥?7.0
鈥?00
鈥?200
CASE 318D鈥?3, STYLE 1
SC鈥?9
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
PD
TJ
Tstg
Max
200
150
鈥?55 ~ +150
Unit
mW
擄C
擄C
ELECTRICAL CHARACTERISTICS
(TA = 25擄C)
Characteristic
Collector鈥揈mitter Breakdown Voltage (IC = 鈥?2.0 mAdc, IB = 0)
Collector鈥揃ase Breakdown Voltage (IC = 鈥?0
碌A(chǔ)dc,
IE = 0)
Emitter鈥揃ase Breakdown Voltage (IE = 鈥?0
碌A(chǔ)dc,
IE = 0)
Collector鈥揃ase Cutoff Current (VCB = 鈥?5 Vdc, IE = 0)
Collector鈥揈mitter Cutoff Current (VCE = 鈥?0 Vdc, IB = 0)
DC Current Gain(1)
(VCE = 鈥?0 Vdc, IC = 鈥?2.0 mAdc)
Collector鈥揈mitter Saturation Voltage
(IC = 鈥?00 mAdc, IB = 鈥?0 mAdc)
1. Pulse Test: Pulse Width
鈮?/div>
300
碌s,
D.C.
鈮?/div>
2%.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICEO
hFE1
VCE(sat)
Min
鈥?45
鈥?60
鈥?7.0
鈥?/div>
鈥?/div>
210
鈥?/div>
Max
鈥?/div>
鈥?/div>
鈥?/div>
鈥?0.1
鈥?00
340
鈥?0.5
Unit
Vdc
Vdc
Vdc
碌A(chǔ)dc
nAdc
鈥?/div>
Vdc
DEVICE MARKING
Marking Symbol
AR
X
The 鈥淴鈥?represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 3
漏
Motorola, Inc. 1996
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
1
MSB709-RT1 產(chǎn)品屬性
3,000
分離式半導體產(chǎn)品
晶體管(BJT) - 單路
-
PNP
100mA
45V
500mV @ 10mA，100mA
100nA
210 @ 2mA，10V
200mW
-
表面貼裝
TO-236-3，SC-59，SOT-23-3
SC-59
帶卷 (TR)
MSB709-RT1OS
MSB709-RT1相關(guān)型號PDF文件下載
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描述
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