鈥?/div>
Available in 8 mm, 7鈥搃nch/3000 Unit Tape and Reel
COLLECTOR
3
MSB1218A-RT1
MSB1218A-ST1
Motorola Preferred Devices
PNP GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
1
BASE
2
EMITTER
1
3
MAXIMUM RATINGS
(TA = 25擄C)
Rating
Collector鈥揃ase Voltage
Collector鈥揈mitter Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Collector Current 鈥?Peak
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
IC(P)
Value
45
45
7.0
100
200
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
2
CASE 419鈥?2, STYLE 3
SC鈥?0/SOT鈥?23
DEVICE MARKING
MSB1218A鈥揜T1 = BR
MSB1218A鈥揝T1 = BS
THERMAL CHARACTERISTICS
Rating
Power Dissipation(1)
Junction Temperature
Storage Temperature Range
Symbol
PD
TJ
Tstg
Max
150
150
鈥?55 ~ + 150
Unit
mW
擄C
擄C
ELECTRICAL CHARACTERISTICS
Characteristic
Collector鈥揈mitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0)
Collector鈥揃ase Breakdown Voltage (IC = 10
碌Adc,
IE = 0)
Emitter鈥揃ase Breakdown Voltage (IE = 10
碌Adc,
IE = 0)
Collector鈥揃ase Cutoff Current (VCB = 20 Vdc, IE = 0)
Collector鈥揈mitter Cutoff Current (VCE = 10 Vdc, IB = 0)
DC Current Gain(2)
(VCE = 10 Vdc, IC = 2.0 mAdc)
Collector鈥揈mitter Saturation Voltage(2)
(IC = 100 mAdc, IB = 10 mAdc)
MSB1218A鈥揜T1
MSB1218A鈥揝T1
VCE(sat)
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICEO
hFE1
210
290
鈥?/div>
340
460
0.5
鈥?/div>
鈥?/div>
Vdc
Min
45
45
7.0
鈥?/div>
鈥?/div>
Max
鈥?/div>
鈥?/div>
鈥?/div>
0.1
100
Unit
Vdc
Vdc
Vdc
碌A
碌A
1. Device mounted on a FR鈥? glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width
鈮?/div>
300
碌s,
D.C.
鈮?/div>
2%.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
MSB1218A-RT1 產(chǎn)品屬性
3,000
分離式半導體產(chǎn)品
晶體管(BJT) - 單路
-
PNP
100mA
45V
500mV @ 10mA，100mA
100µA
210 @ 2mA，10V
150mW
-
表面貼裝
SC-70，SOT-323
SC-70-3（SOT323）
帶卷 (TR)
MSB1218A-RT1相關型號PDF文件下載
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