鈥?/div>
Tungsten/Platinum schottky barrier
Oxide passivated structure for very low leakage currents
Guard ring protection for increased reverse energy capability
Epitaxial structure minimizes forward voltage drop
Hermetically sealed, low profile ceramic surface mount power package
Low package inductance
Very low thermal resistance
Available as standard polarity (strap-to-anode, MSASC100H45H) and
reverse polarity (strap-to-cathode: MSASC100H45HR)
45 Volts
100 Amps
SURFACE MOUNT
LOW VOLTAGE DROP
SCHOTTKY DIODE
Maximum Ratings @ 25擄C (unless otherwise specified)
擄
DESCRIPTION
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc鈮?125擄C
derating, forward current, Tc鈮?125擄C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
Peak Repetitive Reverse Surge Current, tp= 1碌s, f= 1kHz
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case:
MSASC100H45H
MSASC100H45HR
SYMBOL
V
RRM
V
RWM
V
R
I
F(ave)
dI
F
/dT
I
FSM
I
RRM
T
j
T
stg
胃
JC
MAX.
45
45
45
100
4
500
2
-65 to +150
-65 to +150
0.35
0.5
UNIT
Volts
Volts
Volts
Amps
Amps/擄C
Amps
Amp
擄C
擄C
擄C/W
Mechanical Outline
Datasheet# MSC0292A