鈩?/div>
Gain Block
鈥?3 dB Bandwidth:
DC to 1.3 GHz
鈥?High Gain:
18.5 dB Typical at 0.5 GHz
鈥?Unconditionally Stable
(k>1)
The MSA-series is fabricated using
HP鈥檚 10 GHz f
T
, 25 GHz f
MAX
, silicon
bipolar MMIC process which uses
nitride self-alignment, ion implanta-
tion, and gold metallization to
achieve excellent performance,
uniformity and reliability. The use
of an external bias resistor for
temperature and current stability
also allows bias flexibility.
The recommended assembly
procedure is gold-eutectic die
attach at 400擄C and either wedge or
ball bonding using 0.7 mil gold
wire.
[1]
See APPLICATIONS section,
鈥淐hip Use鈥?
Chip Outline
[1]
Description
The MSA-0100 is a high performance
silicon bipolar Monolithic Microwave
Integrated Circuit (MMIC) chip. This
MMIC is designed for use as a general
purpose 50
鈩?/div>
gain block. Typical
applications include narrow and
broad band IF and RF amplifiers in
commercial, industrial and military
applications.
Typical Biasing Configuration
R
bias
V
CC
> 7 V
Note:
1. This chip contains additional biasing
options. The performance specified
applies only to the bias option whose
bond pads are indicated on the chip
outline. Refer to the APPLICATIONS
section 鈥淪ilicon MMIC Chip Use鈥?for
additional information.
RFC (Optional)
C
block
IN
MSA
C
block
OUT
V
d
= 5 V
5965-9689E
6-242
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