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MRF927T1 Datasheet

  • MRF927T1

  • LOW NOISE HIGH FREQUENCY TRANSISTOR

  • 12頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF927T1/D
The RF Small Signal Line
NPN Silicon Low Voltage,
Low Current, Low Noise,
High-Frequency Transistors
Designed for use in low voltage, low current applications at frequencies to
2.0 GHz. Specifically aimed at portable communication devices such as
pagers and hand鈥揾eld phones.
鈥?/div>
High Gain (GUmax 15 dB Typ @ 1.0 GHz) @ 1.0 mA
鈥?/div>
Small, Surface鈥揗ount Package (SC鈥?0)
鈥?/div>
High Current Gain鈥揃andwidth Product at Low Current,
Low Voltage (f
蟿
= 8.0 GHz Typ @ 3.0 V, 5.0 mA)
鈥?/div>
Available in Tape and Reel by Adding T1 or T3 Suffix to Part Number.
T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel.
T3 Suffix = 10,000 Units per 8 mm, 7 inch Reel.
MRF927T1
MRF927T3
IC = 10 mA
LOW NOISE
HIGH FREQUENCY
TRANSISTOR
CASE 419鈥?2, STYLE 3
(SC鈥?0/SOT鈥?23)
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TC = 50擄C
Derate above 50擄C
Storage Temperature Range
Operating Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
Value
10
20
2.5
10
100
1.0
鈥?55 to +150
150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction鈥搕o鈥揅ase
Symbol
R
胃JC
Value
1000
Unit
擄C/W
DEVICE MARKING
MRF927T1 = F
REV 1
MOTOROLA RF
漏
Motorola, Inc. 1997
DEVICE DATA
MRF927T1 MRF927T3
1

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