Nominal.
鈥?/div>
In Tape and Reel.
R3
Suffix =
250
Units per
56 mm, 13 inch Reel.
MRF9200LR3
MRF9200LSR3
880 MHz, 40 W AVG., 26 V
SINGLE N鈭扖DMA
LATERAL N鈭扖HANNEL
RF POWER MOSFETs
CASE 465B鈭?3, STYLE 1
NI鈭?80
MRF9200LR3
Table 1. Maximum Ratings
Rating
Drain鈭扴ource Voltage
Gate鈭扴ource Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
CW Operation
Case Temperature 60擄C
Case Temperature 80擄C
CASE 465C鈭?2, STYLE 1
NI鈭?80S
MRF9200LSR3
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
CW
200
160
Value
鈭?.5,
+65
鈭?.5,
+15
625
3.6
鈭?5
to +150
200
Unit
Vdc
Vdc
W
W/擄C
擄C
擄C
W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 60擄C, 200 W CW
Case Temperature 80擄C, 40 W CW
Symbol
R
胃JC
Value
(1,2)
0.28
0.34
Unit
擄C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
2. Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes
鈭?/div>
AN1955.
NOTE
鈭?/div>
CAUTION
鈭?/div>
MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
漏
Freescale Semiconductor, Inc., 2004. All rights reserved.
MRF9200LR3 MRF9200LSR3
5鈭?
Freescale Semiconductor
Wireless RF Product Device Data
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