MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF9180/D
The RF Sub鈥揗icron MOSFET Line
RF Power Field Effect Transistors
N鈥揅hannel Enhancement鈥揗ode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of these devices make them ideal for large鈥搒ignal, common鈥搒ource amplifier
applications in 26 volt base station equipment.
鈥?/div>
Typical CDMA Performance @ 880 MHz, 26 Volts, I
DQ
= 2 700 mA
IS鈥?7 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power 鈥?40 Watts
Power Gain 鈥?17 dB
Efficiency 鈥?26%
Adjacent Channel Power 鈥?/div>
750 kHz:
鈥?5.0 dBc @ 30 kHz BW
1.98 MHz:
鈥?0.0 dBc @ 30 kHz BW
鈥?/div>
Internally Matched, Controlled Q, for Ease of Use
鈥?/div>
High Gain, High Efficiency and High Linearity
鈥?/div>
Integrated ESD Protection
鈥?/div>
Designed for Maximum Gain and Insertion Phase Flatness
鈥?/div>
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 170 Watts (CW)
Output Power
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large鈥揝ignal Impedance Parameters
MRF9180
MRF9180S
880 MHz, 170 W, 26 V
LATERAL N鈥揅HANNEL
RF POWER MOSFETs
CASE 375D鈥?4, STYLE 1
NI鈥?230
MRF9180
CASE 375E鈥?3, STYLE 1
NI鈥?230S
MRF9180S
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Gate鈥揝ource Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
鈥?.5, +15
388
2.22
鈥?5 to +200
200
Unit
Vdc
Vdc
Watts
W/擄C
擄C
擄C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M1 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
0.45
Unit
擄C/W
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MOTOROLA RF
錚?/div>
Motorola, Inc. 2002
DEVICE DATA
MRF9180 MRF9180S
1
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