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MRF9130LR3 Datasheet

  • MRF9130LR3

  • RF Power Field Effect Transistors

  • 12頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF9130L/D
The RF Sub - Micron MOSFET Line
RF Power Field Effect Transistors
Designed for GSM and GSM EDGE base station applications with
frequencies from 921 to 960 MHz, the high gain and broadband performance
of these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
鈥?/div>
Typical Performance for GSM Frequencies, 921 to 960 MHz, 28 Volts
Output Power @ P1dB 鈥?135 Watts
Power Gain 鈥?16.5 dB @ 130 Watts Output Power
Efficiency 鈥?48% @ 130 Watts Output Power
鈥?/div>
Internally Matched, Controlled Q, for Ease of Use
鈥?/div>
High Gain, High Efficiency and High Linearity
鈥?/div>
Integrated ESD Protection
鈥?/div>
Designed for Maximum Gain and Insertion Phase Flatness
鈥?/div>
Capable of Handling 5:1 VSWR, @ 28 Vdc, All Frequency Band,
130 Watts CW Output Power
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Low Gold Plating Thickness on Leads, 40碌鈥?Nominal.
鈥?/div>
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
N - Channel Enhancement - Mode Lateral MOSFETs
MRF9130LR3
MRF9130LSR3
GSM/GSM EDGE
921 - 960 MHz, 130 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 465 - 06, STYLE 1
NI - 780
MRF9130LR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF9130LSR3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
=
25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
- 0.5, +15
298
- 65 to +200
200
Unit
Vdc
Vdc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Value
0.6
Unit
擄C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
1 (Minimum)
M2 (Minimum)
C7 (Minimum)
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
MOTOROLA RF
錚?/div>
Motorola, Inc. 2004
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF9130LR3 MRF9130LSR3
1

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