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MRF9120LR3 Datasheet

  • MRF9120LR3

  • RF Power Field Effect Transistors

  • 12頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF9120/D
The RF MOSFET Line
RF Power Field Effect Transistors
Designed for broadband commercial and industrial applications with frequen-
cies from 865 to 895 MHz. The high gain and broadband performance of these
devices make them ideal for large- signal, common source amplifier applications
in 26 volt base station equipment.
鈥?/div>
Typical CDMA Performance @ 880 MHz, 26 Volts, I
DQ
= 2 x 500 mA
IS - 97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power 鈥?26 Watts
Power Gain 鈥?16 dB
Efficiency 鈥?26%
Adjacent Channel Power 鈥?/div>
750 kHz: - 45 dBc @ 30 kHz BW
1.98 MHz: - 60 dBc @ 30 kHz BW
鈥?/div>
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 120 Watts (CW)
Output Power
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Integrated ESD Protection
鈥?/div>
Designed for Maximum Gain and Insertion Phase Flatness
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40
碌
鈥?/div>
Nominal.
鈥?/div>
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
N - Channel Enhancement - Mode Lateral MOSFETs
MRF9120R3
MRF9120LR3
880 MHz, 120 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
Freescale Semiconductor, Inc.
CASE 375B - 04, STYLE 1
NI - 860
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
- 0.5, +65
- 0.5, +15
250
1.43
- 65 to +150
200
Unit
Vdc
Vdc
W
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Value (1)
0.45
Unit
擄C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M1 (Minimum)
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Rev. 7
MOTOROLA RF
錚?/div>
Motorola, Inc. 2004
DEVICE DATA
For More Information On This Product,
For More Information On This Product,
Go to: www.freescale.com
Go to: www.freescale.com
MRF9120R3 MRF9120LR3
1

MRF9120LR3 產(chǎn)品屬性

  • 250

  • 分離式半導體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 880MHz

  • 16.5dB

  • 26V

  • 10µA

  • -

  • 1A

  • 120W

  • 65V

  • NI-860

  • NI-860

  • 帶卷 (TR)

MRF9120LR3相關(guān)型號PDF文件下載

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