鈥?/div>
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF9100
MRF9100R3
MRF9100SR3
GSM/EDGE 900 MHz, 110 W, 26 V
LATERAL N鈥揅HANNEL
RF POWER MOSFETs
CASE 465鈥?6, STYLE 1
(NI鈥?80)
(MRF9100)
CASE 465A鈥?6, STYLE 1
(NI鈥?80S)
(MRF9100SR3)
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Gate鈥揝ource Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
+15, 鈥?.5
175
1.0
鈥?5 to +200
200
Unit
Vdc
Vdc
Watts
W/擄C
擄C
擄C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
1 (Minimum)
M3 (Minimum)
C7 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
1.0
Unit
擄C/W
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA RF
錚?/div>
Motorola, Inc. 2002
DEVICE DATA
MRF9100 MRF9100R3 MRF9100SR3
1
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