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MRF9085LR3 Datasheet

  • MRF9085LR3

  • 880 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

  • 8頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF9085/D
The RF Sub - Micron MOSFET Line
RF Power Field Effect Transistors
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of these devices make them ideal for large - signal, common - source amplifier
applications in 26 volt base station equipment.
鈥?/div>
Typical CDMA Performance @ 880 MHz, 26 Volts, I
DQ
= 700 mA
IS - 97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power 鈥?20 Watts
Power Gain 鈥?17.9 dB
Efficiency 鈥?28%
Adjacent Channel Power 鈥?/div>
750 kHz: - 45.0 dBc @ 30 kHz BW
1.98 MHz: - 60.0 dBc @ 30 kHz BW
鈥?/div>
Internally Matched, Controlled Q, for Ease of Use
鈥?/div>
High Gain, High Efficiency and High Linearity
鈥?/div>
Integrated ESD Protection
鈥?/div>
Designed for Maximum Gain and Insertion Phase Flatness
鈥?/div>
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW
Output Power
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Low Gold Plating Thickness on Leads, 40碌鈥?Nominal.
鈥?/div>
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
N - Channel Enhancement - Mode Lateral MOSFETs
MRF9085LR3
MRF9085LSR3
880 MHz, 90 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 465 - 06, STYLE 1
NI - 780
MRF9085LR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF9085LSR3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
=
25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
- 0.5, +15
250
1.43
- 65 to +150
200
Unit
Vdc
Vdc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Value (1)
0.7
Unit
擄C/W
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 9
MOTOROLA RF
錚?/div>
Motorola, Inc. 2004
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF9085LR3 MRF9085LSR3
1

MRF9085LR3 產(chǎn)品屬性

  • 250

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 880MHz

  • 17.9dB

  • 26V

  • 10µA

  • -

  • 700mA

  • 105W

  • 65V

  • NI-780

  • NI-780

  • 帶卷 (TR)

MRF9085LR3相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    Advanced Semiconductor [NPN SILICON RF TRANSISTOR]
    ASI
  • 英文版
    RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
    MICROSEMI
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    RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
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    NPN SILICON RF TRANSISTOR
    ASI
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    NPN SILICON RF TRANSISTOR
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  • 英文版
    RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
    MICROSEMI ...
  • 英文版
    RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
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    RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
    MICROSEMI ...
  • 英文版
    Motorola, Inc [NPN Silicon Low Noise, High-Frequency Transi...
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    NPN SILICON RF TRANSISTOR
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    NPN SILICON RF TRANSISTOR
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  • 英文版
    Motorola, Inc [The Rf Line NPN Silicon High-Frequency Trans...
    MOTOROLA
  • 英文版
    RF POWER FIELD EFFECT TRANSISTORS
    MOTOROLA
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    RF POWER FIELD EFFECT TRANSISTORS
    MOTOROLA [...
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    RF POWER FIELD EFFECT TRANSISTORS
    MOTOROLA
  • 英文版
    RF POWER FIELD EFFECT TRANSISTORS
    MOTOROLA [...
  • 英文版
    945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOS...
    MOTOROLA
  • 英文版
    945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOS...
    MOTOROLA [...
  • 英文版
    RF POWER FIELD EFFECT TRANSISTORS
    MOTOROLA

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