Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
碌鈥?/div>
Nominal.
MRF9080
MRF9080R3
MRF9080SR3
MRF9080LSR3
GSM 900 MHz FREQUENCY BAND,
75 W, 26 V
LATERAL N鈥揅HANNEL
BROADBAND RF POWER MOSFETs
CASE 465鈥?6, STYLE 1
NI鈥?80
MRF9080
CASE 465A鈥?6, STYLE 1
NI鈥?80S
MRF9080SR3, MRF9080LSR3
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Gate鈥揝ource Voltage
Total Device Dissipation @ T
C
=
25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
鈥?.5, +15
250
1.43
鈥?5 to +200
200
Unit
Vdc
Vdc
Watts
W/擄C
擄C
擄C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M1 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
0.7
Unit
擄C/W
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
MOTOROLA RF
錚?/div>
Motorola, Inc. 2002
DEVICE DATA
MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3
1
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