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MRF9045MR1 Datasheet

  • MRF9045MR1

  • RF POWER FIELD EFFECT TRANSISTORS

  • 12頁(yè)

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF9045MR1/D
The RF Sub鈥揗icron MOSFET Line
RF Power Field Effect Transistors
Designed for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large鈥搒ignal, common鈥搒ource amplifier applications in
28 volt base station equipment.
鈥?/div>
Typical Performance at 945 MHz, 28 Volts
Output Power 鈥?45 Watts PEP
Power Gain 鈥?19 dB
Efficiency 鈥?41% (Two Tones)
IMD 鈥?鈥?1 dBc
鈥?/div>
Integrated ESD Protection
鈥?/div>
Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz,
45 Watts CW Output Power
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large鈥揝ignal Impedance Parameters
鈥?/div>
Dual鈥揕ead Boltdown Plastic Package Can Also Be Used As Surface
Mount.
鈥?/div>
TO鈥?72 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
鈥?/div>
TO鈥?70 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
N鈥揅hannel Enhancement鈥揗ode Lateral MOSFETs
MRF9045MR1
MRF9045MBR1
945 MHz, 45 W, 28 V
LATERAL N鈥揅HANNEL
BROADBAND
RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 1265鈥?8, STYLE 1
TO鈥?70
PLASTIC
MRF9045MR1
CASE 1337鈥?3, STYLE 1
TO鈥?72 DUAL LEAD
PLASTIC
MRF9045MBR1
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Gate鈥揝ource Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Value
65
+15, 鈥?.5
177
1.18
鈥?5 to +150
175
Unit
Vdc
Vdc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Max
0.85
Unit
擄C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M2 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology
Per JESD 22鈥揂113
Rating
3
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MOTOROLA RF
錚?/div>
Motorola, Inc. 2003
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF9045MR1 MRF9045MBR1
1

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