音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

MRF9030SR1 Datasheet

  • MRF9030SR1

  • RF POWER FIELD EFFECT TRANSISTORS

  • 12頁

  • MOTOROLA   MOTOROLA

掃碼查看芯片數(shù)據(jù)手冊(cè)

上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF9030/D
The RF Sub鈥揗icron MOSFET Line
RF Power Field Effect Transistors
N鈥揅hannel Enhancement鈥揗ode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large鈥搒ignal, common鈥搒ource amplifier applications in
26 volt base station equipment.
鈥?/div>
Typical Two鈥揟one Performance at 945 MHz, 26 Volts
Output Power 鈥?30 Watts PEP
Power Gain 鈥?19 dB
Efficiency 鈥?41.5%
IMD 鈥?鈥?2.5 dBc
鈥?/div>
Integrated ESD Protection
鈥?/div>
Designed for Maximum Gain and Insertion Phase Flatness
鈥?/div>
Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW
Output Power
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large鈥揝ignal Impedance Parameters
鈥?/div>
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
MRF9030R1
MRF9030SR1
945 MHz, 30 W, 26 V
LATERAL N鈥揅HANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B鈥?5, STYLE 1
NI鈥?60
MRF9030R1
CASE 360C鈥?5, STYLE 1
NI鈥?60S
MRF9030SR1
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Gate鈥揝ource Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
MRF9030R1
MRF9030SR1
Symbol
V
DSS
V
GS
P
D
P
D
T
stg
T
J
Value
68
鈥?.5, +15
92
0.53
117
0.67
鈥?5 to +200
200
Unit
Vdc
Vdc
Watts
W/擄C
Watts
W/擄C
擄C
擄C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M1 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
MRF9030R1
MRF9030SR1
Symbol
R
胃JC
Max
1.9
1.5
Unit
擄C/W
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
MOTOROLA RF
錚?/div>
Motorola, Inc. 2002
DEVICE DATA
MRF9030R1 MRF9030SR1
1

MRF9030SR1相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    Advanced Semiconductor [NPN SILICON RF TRANSISTOR]
    ASI
  • 英文版
    RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
    MICROSEMI
  • 英文版
    RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
    MICROSEMI ...
  • 英文版
    NPN SILICON RF TRANSISTOR
    ASI
  • 英文版
    NPN SILICON RF TRANSISTOR
    ASI [Advan...
  • 英文版
    RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
    MICROSEMI
  • 英文版
    RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
    MICROSEMI ...
  • 英文版
    RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
    MICROSEMI
  • 英文版
    RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
    MICROSEMI ...
  • 英文版
    Motorola, Inc [NPN Silicon Low Noise, High-Frequency Transi...
    MOTOROLA
  • 英文版
    NPN SILICON RF TRANSISTOR
    ASI
  • 英文版
    NPN SILICON RF TRANSISTOR
    ASI [Advan...
  • 英文版
    Motorola, Inc [The Rf Line NPN Silicon High-Frequency Trans...
    MOTOROLA
  • 英文版
    RF POWER FIELD EFFECT TRANSISTORS
    MOTOROLA
  • 英文版
    RF POWER FIELD EFFECT TRANSISTORS
    MOTOROLA [...
  • 英文版
    RF POWER FIELD EFFECT TRANSISTORS
    MOTOROLA
  • 英文版
    RF POWER FIELD EFFECT TRANSISTORS
    MOTOROLA [...
  • 英文版
    945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOS...
    MOTOROLA
  • 英文版
    945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOS...
    MOTOROLA [...
  • 英文版
    RF POWER FIELD EFFECT TRANSISTORS
    MOTOROLA

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買家服務(wù)：
賣家服務(wù)：
技術(shù)客服：

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時(shí)間周一至周五
9:00-17:30

關(guān)注官方微信號(hào)，
第一時(shí)間獲取資訊。

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見，您的參與是維庫提升服務(wù)的動(dòng)力！意見一經(jīng)采納，將有感恩紅包奉上哦！