鈥?/div>
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揈mitter Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 50擄C (1)
Derate above 50擄C
Storage Temperature Range
Symbol
VCEO
VCES
VEBO
IC
PD
Tstg
Value
30
55
4.0
0.6
18
0.143
鈥?65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
MRF891
MRF891S
5.0 W, 900 MHz
RF POWER
TRANSISTORS
NPN SILICON
CASE 319鈥?7, STYLE 2
MRF891
CASE 319A鈥?2, STYLE 2
MRF891S
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (2)
Symbol
R
胃JC
Max
7.0
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
Collector鈥揈mitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0)
Emitter鈥揃ase Breakdown Voltage
(IE = 0.5 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 30 Vdc, VBE = 0, TC = 25擄C)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
30
55
4.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.0
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 200 mAdc, VCE = 5.0 Vdc)
hFE
30
鈥?/div>
150
鈥?/div>
NOTES:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 6
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF891 MRF891S
2鈥?1
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