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MRF6S9060NR1 Datasheet

  • MRF6S9060NR1

  • RF Power Field Effect Transistors

  • 531.36KB

  • 16頁

  • FREESCALE

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Freescale Semiconductor
Technical Data
Document Number: MRF6S9060
Rev. 1, 6/2005
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
鈥?/div>
Typical Single - Carrier N - CDMA Performance @ 880 MHz, V
DD
= 28 Volts,
I
DQ
= 450 mA, P
out
= 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain 鈥?21.4 dB
Drain Efficiency 鈥?32.1%
ACPR @ 750 kHz Offset 鈥?- 47.6 dBc @ 30 kHz Bandwidth
GSM EDGE Application
鈥?/div>
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ
= 500 mA,
P
out
= 21 Watts Avg., Full Frequency Band (921 - 960 MHz)
Power Gain 鈥?20 dB
Drain Efficiency 鈥?46%
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM 鈥?1.5% rms
GSM Application
鈥?/div>
Typical GSM Performance: V
DD
= 28 Volts, I
DQ
= 500 mA, P
out
= 60 Watts,
Full Frequency Band (921 - 960 MHz)
Power Gain 鈥?20 dB
Drain Efficiency 鈥?63%
鈥?/div>
Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 60 Watts CW
Output Power
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Integrated ESD Protection
鈥?/div>
N Suffix Indicates Lead - Free Terminations
鈥?/div>
200擄C Capable Plastic Package
鈥?/div>
TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
鈥?/div>
TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
MRF6S9060NR1
MRF6S9060NBR1
MRF6S9060MR1
MRF6S9060MBR1
880 MHz, 14 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
BROADBAND RF POWER MOSFETs
CASE 1265- 08, STYLE 1
TO - 270 - 2
PLASTIC
MRF6S9060NR1(MR1)
CASE 1337 - 03, STYLE 1
TO - 272 - 2
PLASTIC
MRF6S9060NBR1(MBR1)
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
- 0.5, +68
- 0.5, + 12
227
1.3
- 65 to +150
200
Unit
Vdc
Vdc
W
W/擄C
擄C
擄C
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
錚?/div>
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
1
RF Device Data
Freescale Semiconductor

MRF6S9060NR1 產(chǎn)品屬性

  • 500

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 880MHz

  • 21.4dB

  • 28V

  • 10µA

  • -

  • 450mA

  • 14W

  • 68V

  • TO-270AA

  • TO-270-2

  • 帶卷 (TR)

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